Development of Znse Blue Light Emitting Devices by Metalorganic Molecular Beam Epitaxy(MOMBE)

金属有机分子束外延（MOMBE）开发Znse蓝光发光器件

• 批准号: 60460060
• 负责人: KASAI Haruo
• 金额: $ 4.86万
• 依托单位: Chiba University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1985
• 资助国家: 日本
• 起止时间: 1985 至 1987
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-60460060/
• 关键词: Metalorganic Molecular Beam Epitaxy; Growth of ZnSe Films; Growth Kinetics Cracking; Blue light Emitting Devices; II-VI Compounds; II-V1化合物; 表面モフォロジー; 化合物半導体; 【II】-【VI】族化合物半導体; セレン化亜鉛; 分子線エピタキシー; MOCVD; MOMBE

ZnSe, which is one of the most promising semiconductors for blue light-emitting-diodes, has been grown by Metalorganic Molecular Beam Epitaxy(MOMBE) using Dimethylzinc (DMZn) and H_2Seas reactans.In MOMBE, since the filmsu are grown at low temperature in a clean atmosphere,growth of very high-quality crystals can be expected.Furthermore,sinceZnSe films are grown under high-vaccum condition,"premature reaction"in gas-phase,that is one of the serious problem in conventional MOCVD,can be avoidable in MOMBE.We have investigated MOMBE growth of ZnSe and obtained several important results as followings,1.The MOMBE system developed in this work has a turbo-molecular-pump and l sccm Mass-Flow-Control-ler in order to achieve the growth under high-vaccum condition.Furthermore,it has a quadru-pole mass spectometer(QMS)and cracking cells.2.Pyrolysis of source-gases in the cracking cell has been examind by using QMS.It was found that DMZn and H_2Se completely dissociate into Zn and Se_2 at cracking temperature of 860゜C and 680゜C,resperctively.3.Growth kinetics of ZnSe films has been studied through investigating the effects of sourcegas cracking on the growth rates of the films.It was shown that the cracking of source-gases drastically affects both the growth kinetics and surface morphology of the films.4.When the source gases are cracked,very smooth and featureless surface can be achieved in MOMBE.Furthermore, through the examinations of low-temperature photoluminescence properties it was found that relatively high-quality ZnSe films can be obtained.

ZnSe 是最有前途的蓝色发光二极管半导体之一，它是通过使用二甲基锌 (DMZn) 和 H_2Seas 反应物的金属有机分子束外延 (MOMBE) 方法生长的。在 MOMBE 中，由于薄膜是在清洁气氛中低温生长的，因此可以期望生长出非常高质量的晶体。此外，由于 ZnSe 薄膜是 在高真空条件下生长，气相中的“过早反应”是传统MOCVD中的严重问题之一，而MOMBE是可以避免的。我们研究了ZnSe的MOMBE生长，并获得了以下几个重要结果：1.本工作开发的MOMBE系统具有涡轮分子泵和l sccm质量流量控制器，以实现高真空下的生长 2.利用QMS对裂解池中源气的热解进行了研究，发现DMZn和H_2Se分别在裂解温度860゜C和680゜C下完全离解为Zn和Se_2。3.ZnSe的生长动力学电影已被研究 通过研究源气体裂解对薄膜生长速率的影响，结果表明，源气体裂解对薄膜的生长动力学和表面形貌都有很大影响。4.当源气体裂解时，MOMBE可以获得非常光滑、无特征的表面。此外，通过低温光致发光性能的测试，发现可以制备相对高质量的ZnSe薄膜。 获得。

项目成果

Akihiko Yoshikawa: "Growth Mechanism of ZnSe Films in Low-Pressure MOCVD" Japanese Journal of Applied Physics. 25. 673-678 (1986)

Akihiko Yoshikawa：“低压 MOCVD 中 ZnSe 薄膜的生长机制”日本应用物理学杂志。

Akihiko Yoshikawa: "Growth of Low-Resistivity High-Quality ZnS Films by Low-pressure Metalorganic Chemical Vapor Deposition" Journal of Crystal Growth. 72. 13-16 (1985)

Akihiko Yoshikawa：“通过低压金属有机化学气相沉积生长低电阻率高质量 ZnS 薄膜”晶体生长杂志。

A.Yoshikawa: Japanese Journal of Applied Physics. 25. 673-678 (1986)

A.Yoshikawa：日本应用物理学杂志。

Akiko Yoshikawa: Journal of Crystal Growth. 86. 279-284 (1988)

Akiko Yoshikawa：晶体生长杂志。

Hideyuki Oniyama: "Growth of ZnSe Films by Metalorganic Molecular Beam Epitaxy" Journal of Faculty of Engineering Chiba University. 39. 11-17 (1987)

Hideyuki Oniyama：“通过金属有机分子束外延生长 ZnSe 薄膜”千叶大学工学院学报。