Development of Znse Blue Light Emitting Devices by Metalorganic Molecular Beam Epitaxy(MOMBE)

ZnSe，其中之一是用于blue light-emitting-diodes的最高推荐半导体， has been grown by Metalorganic Molecular Beam Epitaxy（MOMBE） using Dimethylzinc （DMZn） and H_2 Seas reactans。In MOMBE，自从薄膜在一个干净的大气层中生长在低温度，生长of very high-quality crystals can be expected.Furthermore，自ZnSe薄膜在高真空条件下生长，“预饱和反应”在气体阶段，这是一个常规MOCVD中的一个严重问题，可以避免在MOMBE中出现。我们有研究过的MOMBE增长的MOSSe，并获得了一些重要的结果（如以下所示），MOMBE系统开发在本工作中有一个涡轮-分子泵和l sccm-Flow-Control-ler，以顺序实现高真空度条件下的增长。它有一个四极质谱仪（QMS）和破碎细胞。2.使用QMS进行了测试，发现了DMZn和H_2Se在860 ° C和680 ° C的破碎温度中完全分离的DMZn和H_2Se，3.对ZnSe薄膜的增长动力学研究了通过调查源糖对薄膜增长率的影响的影响。这是因为源气的破裂在电影的增长动力学和表面形态学之间产生了严重的影响。一个非常光滑和功能较少的表面可以在MOMBE.Furthermore中完成，通过低温度光致发光特性的测试，发现了相对高质量的ZnSe电影可以被发现。

ZnSe, which is one of the most promising semiconductors for blue light-emitting-diodes, has been grown by Metalorganic Molecular Beam Epitaxy(MOMBE) using Dimethylzinc (DMZn) and H_2Seas reactans.In MOMBE, since the filmsu are grown at low temperature in a clean atmosphere,growth of very high-quality crystals can be expected.Furthermore,sinceZnSe films are grown under high-vaccum condition,"premature reaction"in gas-phase,that is one of the serious problem in conventional MOCVD,can be avoidable in MOMBE.We have investigated MOMBE growth of ZnSe and obtained several important results as followings,1.The MOMBE system developed in this work has a turbo-molecular-pump and l sccm Mass-Flow-Control-ler in order to achieve the growth under high-vaccum condition.Furthermore,it has a quadru-pole mass spectometer(QMS)and cracking cells.2.Pyrolysis of source-gases in the cracking cell has been examind by using QMS.It was found that DMZn and H_2Se completely dissociate into Zn and Se_2 at cracking temperature of 860゜C and 680゜C,resperctively.3.Growth kinetics of ZnSe films has been studied through investigating the effects of sourcegas cracking on the growth rates of the films.It was shown that the cracking of source-gases drastically affects both the growth kinetics and surface morphology of the films.4.When the source gases are cracked,very smooth and featureless surface can be achieved in MOMBE.Furthermore, through the examinations of low-temperature photoluminescence properties it was found that relatively high-quality ZnSe films can be obtained.