Gas-Source MBE of III-V Heterostructures for Device Applications

用于器件应用的 III-V 异质结构气源 MBE

• 批准号: 9112372
• 负责人: Charles Tu
• 金额: $ 3.6万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-15 至 1992-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9112372&HistoricalAwards=false
• 关键词: Gas; Source; MBE; III; Heterostructures

The Department of Electrical and Computer Engineering at the University of California at San Diego (UCSD) will purchase a 2200/1s turbomolecular pump and its backing pump for the gas-source molecular-beam-epitaxy (GSMBE) system which is dedicated to support research in engineering. The expected increase in wafer throughput of the GSMBE system, with addition of a turbomolecular pump, will benefit many research projects, some of which are listed. 1) Physics and technologies of pseudomorphic heterostructures containing phosphorus. 2) Optoelectronic devices based on (In,Ga)(As,P)/InP heterostructures. 3) Multiple quantum well light modulators for optical computing (GaAs on Si with GaP/GaAsP/GaAs intermediate layers). 4) Advanced heterojunction bipolar transistors with phosphorus-containing materials. 5) Growth and characterization of InGaP/GaAs heterostructures for field-effect transistors. 6) High-temperature (A1,Ga)P/Gap heterojunction bipolar transistors.

电子与计算机系 在旧金山的加州大学工程系 迭戈（UCSD）将购买2200/1 分子泵及其前级泵 气体源分子束外延 该系统致力于支持研究， 工程. 晶圆片的预期增长 GSMBE系统的吞吐量，加上 分子泵，将有利于许多研究 项目，其中一些已被列入。 1)物理和 赝晶异质结技术 含有磷。 2)光电子器件 基于（In，Ga）（As，P）/InP异质结构。第三章 用于光通信的多量子阱光调制器 计算（用GaP/GaAsP/GaAs在Si上的GaAs 中间层）。4)先进异质结 含磷双极晶体管 材料. 5)的生长和性质研究 InGaP/GaAs场效应异质结 晶体管6)高温（Al，Ga）P/Gap 异质结双极晶体管