Gas-Source MBE of III-V Heterostructures for Device Applications

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The Department of Electrical and Computer Engineering at the University of California at San Diego (UCSD) will purchase a 2200/1s turbomolecular pump and its backing pump for the gas-source molecular-beam-epitaxy (GSMBE) system which is dedicated to support research in engineering. The expected increase in wafer throughput of the GSMBE system, with addition of a turbomolecular pump, will benefit many research projects, some of which are listed. 1) Physics and technologies of pseudomorphic heterostructures containing phosphorus. 2) Optoelectronic devices based on (In,Ga)(As,P)/InP heterostructures. 3) Multiple quantum well light modulators for optical computing (GaAs on Si with GaP/GaAsP/GaAs intermediate layers). 4) Advanced heterojunction bipolar transistors with phosphorus-containing materials. 5) Growth and characterization of InGaP/GaAs heterostructures for field-effect transistors. 6) High-temperature (A1,Ga)P/Gap heterojunction bipolar transistors.