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Chemical Reaction and Diffusion in Materials for MOSIC

MOSIC 材料中的化学反应和扩散

基本信息

批准号：
61470055
负责人：
GOTO Kazuhiro
金额：
$ 4.22万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1987
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-61470055/
关键词：
MOSIC Silicon Silicon dioxide film Thermal Oxidation Sputtering Vacuum Deposition Chemical Reaction Diffusion Evaporation Condensation Refractive Index Electrochromism,Li_2O-B_2O_3 MOS 薄膜 RFスパッタ比誘電率界面反応

项目摘要

In this work, we have studied chemical reaction and diffusion in the manufacturing process of electronic devices and materials,i.e.,the materials for MOSIC. The work contains the following contents:(1)the kinetics of thermal oxidation of Si wafers, (2)the characterization of SiO_2 films by rf-sputtering,(3)the mechanism of evaporation and condensation process,and (4)the electrochromism of the La_2O_3-WO_3 binary oxide system. The outlines of these studies are mentioned as follows.(1)Kinetics of thermal oxidation of Si wafers.The oxidation rate in the ambient of CO_2 was much smaller than that in that of O_2.It can be considered that the oxidation in CO_2 is more suitable to the formation of very thin oxide-film. It was estimated that the reaction rate of the oxidation was controlled by the diffusion of the oxidant in SiO_2 and the species were O_2 and CO_2 gas molecules,respectively.(2)Characterization of SiO_2 films by rf-sputtering.The peoduction rate of the film by sputtering was constant, unlike that by the conventional vacuum deposition method. The values of the refractive index and the diffusion coefficient of O_2 were estimated to be almost the same with those of the thermally grown oxides.(3)Mechanism of evaporation and condensation process.The dependence of the evaporation- and condensation-rate on the source- and the substrate-temperaure were investigated with the use of the vacuum deposition method. When the source material was Li_2O-B_2O_3,the vapor species was estimated to be LiBO_2 by virtur of thermodynamics and the kinetic theories of gases.(4)Electrochromism of the La_2O_3-WO_3 binary oxide system.The electrochromism(EC) of the La_2O_3-WO_3 binary oxide system was presented. The production mechanism and the characte-ristics of the EC cells are now being studied.

在这项工作中，我们研究了电子器件和材料制造过程中的化学反应和扩散，即MOSIC材料。工作内容包括：(1)硅片热氧化动力学，(2)射频溅射SiO_2膜的表征，(3)蒸发和冷凝过程的机理，(4)La_2O_3-WO_3二元氧化物体系的电致变色。这些研究的要点如下：(1)硅片的热氧化动力学，在CO_2中的氧化速率远小于在O_2中的氧化速率。可以认为，在CO_2中的氧化更适合于形成很薄的氧化膜。氧化剂在SiO_2中的扩散控制了氧化反应的速度，氧化剂的物种分别为O_2和CO_2气体分子。(2)射频溅射SiO_2薄膜的表征：与传统的真空沉积方法不同，溅射法制备的SiO_2薄膜的产率是恒定的。O_2的折射率和扩散系数与热生长氧化物的折射率和扩散系数基本相同。(3)蒸发和冷凝过程的机理。利用真空镀膜法研究了蒸发和冷凝速率对源温度和衬底温度的依赖关系。(4)La_2O_3-WO_3二元氧化物体系的电致变色研究。目前正在对EC电池的产生机理和特性进行研究。