Development of Silicon Microstrip Detectors

硅微带探测器的研制

• 批准号: 04044125
• 负责人: OHSUGI Takashi
• 金额: $ 3.2万
• 依托单位: Hiroshima University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-04044125/
• 关键词: silicon microstrip detector; microstrip sensor; silicon tracking detector; radiation damage of silicon detector; breakdown of silicon microstrip detector; シリコン検出器; マイクロストリップセンサー; シリコンストリップ検出器; シリコン放射線検出器; 放射線検出器; 半導体放射線検出器

1)We have being developed a silicon microstrip-detector system for a large tracking detector at high energy and high luminosity collider experiments. The key issue that must be studied and solved is radiation damage effects and their treatments.2)The digital readout system which is thought to be essential for the radiation hard detector has been developed and its performances have been demonstrated by beam test. With a combination of 50mum pitch AC coupled sensor and a newly developed preamplifier-shaper-discriminator chip, a detection efficiency of more than 99% and a position resolution of 14mum has been achieved.3)A relation between sensor capacitance and strip geometry has been investigated and optimal design rule has been established.4)We have studied a relation between full-depletion voltage and strip geometry. 5)We have found that a micro-breakdown at the strip edge limits the maximum operable bias voltage. An onset voltage of the micro-breakdown has been found to be sensitive to the geometry of implant strip and AC coupled Al external electrode.6)The radiation effects on bulk increases a full-depletion voltage of the sensor significantly beyond irradiation of a few times 10^<13> protons/cm^2, which demands robustness at high bias-voltage operation.7)The onset-voltage of the micro-breakdown have been worsen significantly by irradiation.

（1）我们正在研制一种用于高能高亮度对撞机实验的大型跟踪探测器的硅微带探测器系统。辐射损伤效应及其处理是必须研究和解决的关键问题。2）研制了辐射硬探测器所必需的数字读出系统，并通过束流试验验证了其性能。采用间距为50 μ m的交流耦合传感器和一种新研制的预偏器-整形器-反偏器芯片相结合，获得了99%以上的检测效率和14 μ m的位置分辨率。3）研究了传感器电容与条形几何形状的关系，建立了优化设计准则。5）我们已经发现，在条带边缘处的微击穿限制了最大可操作偏置电压。发现微击穿的起始电压对注入条和AC耦合Al外电极的几何形状敏感。6）对体的辐射效应显著增加传感器的完全耗尽电压，超过几倍10^<13>质子/cm ^2的辐射，这要求在高偏压操作下具有鲁棒性。7）微击穿的起始电压已被辐射显著恶化。

项目成果

T.Ohsugi et al.(27 co-authors): "Double-Sided Microstrip Sensor for the Barrel Of the SDC Silicon Tracker." Nuclear Instrument and Methods in Physics Research A. A342(印刷中). (1994)

T. Ohsugi 等人（27 名合著者）：“SDC 硅跟踪器桶的双面微带传感器”。A. A342 物理研究中的核仪器和方法（1994 年）。

T.Ohsugi et al.(18 co-authors): "Micro-Discharges of AC coupled Silicon Strip Sensor" Nuclear Instrument and Methods in Physics Research A. A342(印刷中). (1994)

T. Ohsugi 等人（18 位合著者）：“AC 耦合硅带传感器的微放电”核仪器和物理研究方法 A. A342（出版中）。

Takashi Ohsugi: "Prototype Double Sided Silicon Sensor (DSSD) for SDC Detector" 1992 IEEE Conference Report. (1993)

Takashi Ohsugi：“用于 SDC 检测器的原型双面硅传感器 (DSSD)”1992 年 IEEE 会议报告。

T.Ohsugi et al.(18 co-authors): "Micro-Discharges of AC coupled Silicon Strip Sensor" Nuclear Instrument and Methods in Physics Research A. A342. (1994)

T.Ohsugi 等人（18 位合著者）：“AC 耦合硅带传感器的微放电”核仪器和物理研究方法 A. A342。

N.Tamura et al.(20 co-authors): "Radiation Effects of Double-Sided Silicon Strip Sensors" Nuclear Instrument and Methods in Physics Research A. A342(印刷中). (1994)

N. Tamura 等人（20 名合著者）：“双面硅带传感器的辐射效应”核仪器和物理研究方法 A. A342（出版中）。