Development of Silicon Microstrip Detectors

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1)We have being developed a silicon microstrip-detector system for a large tracking detector at high energy and high luminosity collider experiments. The key issue that must be studied and solved is radiation damage effects and their treatments.2)The digital readout system which is thought to be essential for the radiation hard detector has been developed and its performances have been demonstrated by beam test. With a combination of 50mum pitch AC coupled sensor and a newly developed preamplifier-shaper-discriminator chip, a detection efficiency of more than 99% and a position resolution of 14mum has been achieved.3)A relation between sensor capacitance and strip geometry has been investigated and optimal design rule has been established.4)We have studied a relation between full-depletion voltage and strip geometry. 5)We have found that a micro-breakdown at the strip edge limits the maximum operable bias voltage. An onset voltage of the micro-breakdown has been found to be sensitive to the geometry of implant strip and AC coupled Al external electrode.6)The radiation effects on bulk increases a full-depletion voltage of the sensor significantly beyond irradiation of a few times 10^<13> protons/cm^2, which demands robustness at high bias-voltage operation.7)The onset-voltage of the micro-breakdown have been worsen significantly by irradiation.