Development of Silicon Microstrip Detectors

1)研制了一种用于高能高亮度对撞机大型跟踪探测器实验的硅微带探测器系统。辐射损伤效应及其治疗是必须研究和解决的关键问题。研制了被认为是辐射硬探测器必不可少的数字读出系统，并通过波束试验对其性能进行了验证。将50ma间距交流耦合传感器与新开发的前置放大-整形-鉴别芯片相结合，实现了99%以上的检测效率和14ma的位置分辨率。3)研究了传感器电容与条带几何形状的关系，建立了优化设计准则。我们研究了完全耗尽电压与条带几何形状之间的关系。5)我们发现条带边缘的微击穿限制了最大可操作的偏置电压。微击穿的起始电压与植入条的几何形状和交流耦合铝外电极有关。6)当辐照倍数达到10^<13>质子/cm^2的几倍时，辐射效应会显著增加传感器的全耗尽电压，这就要求传感器在高偏压下的稳健性。7)辐照使微击穿的起动电压明显恶化。

1)We have being developed a silicon microstrip-detector system for a large tracking detector at high energy and high luminosity collider experiments. The key issue that must be studied and solved is radiation damage effects and their treatments.2)The digital readout system which is thought to be essential for the radiation hard detector has been developed and its performances have been demonstrated by beam test. With a combination of 50mum pitch AC coupled sensor and a newly developed preamplifier-shaper-discriminator chip, a detection efficiency of more than 99% and a position resolution of 14mum has been achieved.3)A relation between sensor capacitance and strip geometry has been investigated and optimal design rule has been established.4)We have studied a relation between full-depletion voltage and strip geometry. 5)We have found that a micro-breakdown at the strip edge limits the maximum operable bias voltage. An onset voltage of the micro-breakdown has been found to be sensitive to the geometry of implant strip and AC coupled Al external electrode.6)The radiation effects on bulk increases a full-depletion voltage of the sensor significantly beyond irradiation of a few times 10^<13> protons/cm^2, which demands robustness at high bias-voltage operation.7)The onset-voltage of the micro-breakdown have been worsen significantly by irradiation.