Study of Phase Changes and Physical Properties in Iron Nitride Films Prepared by Reactive Sputtering

反应溅射制备氮化铁薄膜的相变和物理性能研究

基本信息

项目摘要

Iron nitride films are premising recording materials because of large saturation mangetization with a reasonable coercive force. In order to use these films as practical recording media, however, several problems including phase stability at elevated temperatures must be overcome. Therefore, in this study phase stability of iron nitride films subjected to elevated temperatures was examined together with phase or structural change taking place during heating process. Electric resistivity measurement of as-sputtered films was also done in order to evaluate a nature of film property, together with the measurement of magnetic property .(i.e.VSM curve). Main results are as follows:(1) Every iron nitride films were found to be prepared by controlling the ratio of nitrogen gas to argon gas, the substrate temperature, discharge voltage and discharge current. It was also found that as-deposited films prepared at elevated substrate temperatures showed very sharp X-ray peaks and consisted of stab … More le iron nitride films such as epsilon-, gamma'- and alpha- phases.(2) A structural change of as-deposited iron nitride films during heating process was investigated by in-situ electron microscopy observations: as-sputtered films contained a small amount of alpha-phase as locally distributed fine particles. Both nitrogen and iron atoms began to take place an site ordering with increasing temperature, and perfect ordered Fe_3N phase was realized during heating process. Two kinds of structural change from the epsilon phase to gamma' phase were observed for different heating rates: These features are well explained on the basis of both diffusion and shear displacement of nitrogen and iron atoms. Characteristics of VSM curves measured after various heating treatments were well explained by considering phase separation and precipitation occurred during heating process. Electric resistivity measurement of as-deposited films was done for various as-deposited iron films. It was found that as-deposited films prepared under higher sputtering gas pressures showed a slightly higher resistivity. This was well explained by considering that a qualitative change took place around grain boundaries formed in as-deposited films. The electric measurement of as-deposited films was found to be effective for evaluation of film property. Further detailed study is in progress. Less
氮化铁薄膜具有较高的饱和磁化率和较好的矫顽力,是一种优良的磁记录材料。然而,为了将这些膜用作实际的记录介质,必须克服几个问题,包括在高温下的相稳定性。因此,在这项研究中,相稳定性的氮化铁薄膜受到高温一起检查相或结构的变化发生在加热过程中。为了评价膜性质的性质,还进行了溅射膜的电阻率测量以及磁性质的测量。(即VSM曲线)。主要结果如下:(1)通过控制氮气与氩气的比例、衬底温度、放电电压和放电电流可以制备出各种氮化铁薄膜。研究还发现,在升高的衬底温度下制备的沉积膜显示出非常尖锐的X射线峰, ...更多信息 即氮化铁膜,例如α-、γ-和α-相。(2)通过原位电子显微镜观察,研究了氮化铁薄膜在加热过程中的结构变化:溅射态薄膜中含有少量的α相,为局部分布的细小颗粒。随着温度的升高,氮原子和铁原子开始发生有序化,在加热过程中形成了完全有序的Fe_3N相。在不同的升温速率下,观察到了从γ相到γ '相的两种结构变化:根据氮和铁原子的扩散和剪切位移,很好地解释了这些特征。考虑到加热过程中发生的相分离和析出,很好地解释了不同热处理后测得的VSM曲线的特征。对不同沉积态的铁膜进行了电阻率测量。结果发现,在较高的溅射气体压力下制备的沉积膜表现出略高的电阻率。这是很好地解释,考虑到发生了质的变化,在沉积膜中形成的晶界周围。沉积态薄膜的电性能测试是评价薄膜性能的有效方法。进一步的详细研究正在进行中。少

项目成果

期刊论文数量(24)
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Sheng Kai Gong and Osamu Nittono: "Electron Microscopy Observations of Heating Processs of Iron Nitride Films Prepared by Reactive Sputtering" Symposium on Materials Science. 8-9 (1989)
宫盛凯、入野修:“反应溅射制备氮化铁薄膜加热过程的电子显微镜观察”材料科学研讨会。
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王宝棣、入戸野修: "オ-ステナント系304ステンレス鋼の高周波窒化の研究" 1989年春期日本金属学会講演発表. 130 (1989)
Baoli Wang、Osamu Nitono:“304奥氏体不锈钢高频氮化的研究”1989年春季日本金属学会讲座130(1989)。
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入戸野修: "膜応力とその物理冶金学的現象の影響" 日本金属学会会報(印刷中). 29. (1990)
Osamu Nitono:“膜应力及其对物理冶金现象的影响”日本金属研究所通报(正在出版)29。(1990)。
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Sheng Kai Gong and Osamu Nittono: "Electron Mocroscopy Observations of Heating Process of Iron Nitride Films Prepared by Reactive Sputtering" Symposium on Materials Science. 8-9 (1988)
宫盛凯、入野修:“反应溅射制备氮化铁薄膜加热过程的电子显微镜观察”材料科学研讨会。
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Muneaki,Yamaguchi;Sheng Kai Gong;Yoshio,Nakamura;Osamu,Nittono: Materials Transaction, Japan Institute of Metals. 30. (1989)
Muneaki,Yamaguchi;Sheng Kai Kong;Yoshio,Nakamura;Osamu,Nittono:材料学报,日本金属研究所。
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NITTONO Osamu其他文献

NITTONO Osamu的其他文献

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{{ truncateString('NITTONO Osamu', 18)}}的其他基金

Fabrication of semi-conductor titanium oxide films containing isolated fine iron-based metal particles and measurement of the GMR effect under illumination of UV light
含有孤立细铁基金属颗粒的半导体氧化钛薄膜的制备以及紫外光照射下 GMR 效应的测量
  • 批准号:
    15360331
  • 财政年份:
    2003
  • 资助金额:
    $ 4.42万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Microstructure and Physical Properties of Magnetic Particles Embedded in Semiconductor AIN Films Having Highly Thermal Conductivity
高导热半导体AlN薄膜中嵌入磁性粒子的微观结构和物理性能
  • 批准号:
    09450234
  • 财政年份:
    1997
  • 资助金额:
    $ 4.42万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study on Phase Transformations for New Materials and under Special Conditions
新材料及特殊条件下的相变研究
  • 批准号:
    09242104
  • 财政年份:
    1997
  • 资助金额:
    $ 4.42万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
Structural Properties and Size-control of Visible Photoluminescent Porous Silicon
可见光致发光多孔硅的结构性能及尺寸控制
  • 批准号:
    05452273
  • 财政年份:
    1993
  • 资助金额:
    $ 4.42万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Preparation of stable iron nitride films by high speed reactive sputtering
高速反应溅射制备稳定氮化铁薄膜
  • 批准号:
    63850152
  • 财政年份:
    1988
  • 资助金额:
    $ 4.42万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research
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