Microstructure and Physical Properties of Magnetic Particles Embedded in Semiconductor AIN Films Having Highly Thermal Conductivity

高导热半导体AlN薄膜中嵌入磁性粒子的微观结构和物理性能

• 批准号: 09450234
• 负责人: NITTONO Osamu
• 金额: $ 7.55万
• 依托单位: TOKYO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450234/
• 关键词: reactive sputtering; aluminum nitride; cobalt particle; dispersed magnetic particle; saturated magnetization; iron alloy particle; electric resisitvity; phase decomposition; 反応スパツタ法; 鉄微粒子; 保磁力

The purpose of this study is to fabricate nanocomposite AlN films containing magnetic particles, such as Co, Fe, and Fe-Co alloys by the use of a low-cost preparation apparatus, and to examine their microstructure and relevant physical properties. AlN is a semiconductor which has highly thermal conductivity and highly chemical resistance. The main results are as follows : (1) By changing the composition ratio of argon gas to nitrogen gas as sputtering gas in a two-facing-target dc sputtering chamber, it was easy to fabricate AlN films which contain Go, Fe, and Fe-Co particles in a desired range of composition. Their microstructure and magnetic properties including electrical resistivity were examined for the annealed films as well as as-deposited films in detail, and their characteristics were summarized in comparison with each other. (2) When the gas ratio of nitrogent to argon is large, as-depsosited films appear more amorphous-like than the films prepared at the small gas ratio, and … More showed different behavior of crystalization during annealing. As-deposite AlN films do not exhibit collumnar structure at all for the films prepared at higher gas ratios. (3) The formation of CoNx was not seen for the films even when the Al-Co comosite targets were used at lower gas ratios. When Al-Fe target was used, as-deposited films did not show any magnetic properties. This may be ascribed to the fabrication of a newly formed AlFe compound which does not exhibit magnetic property. But FeNx iron-nitrides were formed after annealing and decomposed at elevated temperatures. For both films after annealing, we can observe a drastic change in magnetic property as well as electrical resistivity, and this was ascribed to the changes in microstructure in the films. (4) Both Al target and FeCo target were used for the formation of nanocomposite films, and most of the films were pilled out from the substrates at around 400 。C, and this was ascribe to the decomposition process of the films into Co phase and FeN phase which took place drastically for the films prepared by using FeCo target. (5) A fundamental study concerning the measurement of dynamic hardness was performed preliminarily for the Co-C films, It was found that the measurements of DHT115 are available for estimation of metal composition in the films. This result suggests that this method will be able to estimate the metal composition of AlN films containing magnetic particles after some improvements according to the previous results for the Co-C films. Less

本研究的目的是通过使用一种低成本的制备设备来制备含有磁性颗粒（如Co、Fe和Fe-Co合金）的纳米复合AlN薄膜，并研究其微观结构和相关的物理性能。AlN是具有高导热性和高耐化学性的半导体。主要结果如下：（1）在双面靶直流溅射室中，通过改变溅射气体氩气和氮气的成分比，可以容易地制备出在所需成分范围内含有Go、Fe和Fe-Co颗粒的AlN薄膜。对退火膜和沉积膜的微观结构和磁性能（包括电阻率）进行了详细的研究，并对它们的特点进行了总结。(2)当氮气与氩气的气体比例较大时，沉积态薄膜比小气体比例下制备的薄膜更接近非晶态， ...更多信息 在退火过程中表现出不同的结晶行为。在较高的气体比例下制备的AlN薄膜没有出现柱状结构。(3)即使在较低气体比下使用Al-Co复合材料靶时，薄膜中也没有观察到CoNx的形成。当使用Al-Fe靶时，沉积的薄膜没有显示出任何磁性。这可能归因于新形成的AlFe化合物的制造，其不显示磁性。但退火后形成FeNx铁氮化物，并在高温下分解。退火后的两种薄膜，我们可以观察到磁性能以及电阻率的急剧变化，这归因于薄膜中的微结构的变化。(4)Al靶和FeCo靶均用于形成纳米复合膜，并且大部分膜在400 ℃左右从基底上剥离。这是由于FeCo靶制备的薄膜发生了剧烈的Co相和FeN相的分解过程。(5)对Co-C薄膜的动态硬度测量进行了初步的基础研究，发现DHT 115的测量结果可用于薄膜中金属成分的估计。这一结果表明，该方法将能够估计的金属成分的AlN薄膜含有磁性颗粒后，根据以前的结果为Co-C膜的一些改进。少

项目成果

A.G.ROY and Osamu NITTONO: "Fabrication and Chracterization of Al-Co/Al-N-Co Multilayer Films" The Third Pacific Rim International Conference on Advanced Materials and Processing(PRICM3). 959-964 (1998)

A.G.ROY 和 Osamu NITTONO：“Al-Co/Al-N-Co 多层薄膜的制造和表征”第三届环太平洋先进材料与加工国际会议 (PRICM3)。

A.G.ROY,Y.Haga and Osamu NITTONO: "Microstructure and Magnetic Properties of AlN Thin Films Containg Cobalt(Co)Particles Prepared by Reactive Sputtering" Proceedings of International Conference on Microstructures and Functions of Materials. ICMFM96. 189-1

A.G.ROY、Y.Haga 和 Osamu NITTONO：“反应溅射制备的含钴（Co）颗粒的 AlN 薄膜的微观结构和磁性”材料微观结构和功能国际会议论文集。

A.G.Roy,入戸野修: "Structural Properties induced by Annealing in AIN Films Containing Magnetic Metal and Alloy Particles" 日本大学拠点大学セミナー. (1998)

A.G.Roy、Osamu Nitono：“包含磁性金属和合金颗粒的 AIN 薄膜中退火引起的结构特性”日本大学研讨会（1998 年）。