Structural Properties and Size-control of Visible Photoluminescent Porous Silicon
Structural Properties and Size-control of Visible Photoluminescent Porous Silicon
批准号:
05452273
负责人:
NITTONO Osamu
金额:
$4.54万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994
中文摘要
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英文摘要
The purposes of this study are to find suitable preparation conditions for porous silicon (PS) layrs having a constant size-distribution of residual Si parts, and to discuss common structural features including emitting parts and their morphology and crystallinity for the p+PS and n+ PS layrs with reference to photoluminescent natures. The PS layrs, formed on heavily doped p-type and n-type silicon wafers of low resistivi less than 0.02OMEGAcm, have been investigated by mainly X-ray multi-crystal diffractometry, supplemented with electron diffraction and scanning electron microscopy and transmission electron microscopy. Main experimental results are as follow : The p+ PS layr presents a wirelike or branched structure of more than 10nm in diameter from the top surface to the bottom part of the PS layr. It was easy to get p+ PS layrs with a constant size-distribution by controlling preparation conditions. The PS layr exibits a slightly larger lattice spacing than the si substate along th … More e direction normal to the surface. The p+ PS layr shows a sharp peak on X-ray diffraction profile measured by X-ray double-crystal diffractometer, indicating that the p+ PS exhibits the same crystallinity as that of the Si substrate. It was also shown that PS layrs which exhibit intensive photoluminescence under He-Cd laser illumination at room temperature are not amorphous, but crystalline, and that the visible photoluminescence is strongly related to the microstructure of PS layr near the surface that shows a spongelike structure consisting of a large number of silicon crystallites of few nm's in size. On the contrary, the n+ PS layr always shows broad diffuse scattering under severl coherent peaks for the n+ PS layr in a large angular range, indicating that the crystallinity of the n+ PS layrs is inferior to that of the p+ PS layrs, probably due to some modifications of the nanostructure of PS layr. It was also found that the n+ PS layrs are composed of several layred pore-structures which are associated with anodization processes, and that halogen-lamp illumination was very effective in forming such a spongelike structure which can emit visible photoluminescence near the top surfaces of the PS layrs.In conclusion, we would like to say that visible light emission comes from only the PS layr that has a spongelike structure consisting of a large number of silicon parts of few nm's in size, and that photoluminescence is probably due to charge carrier confinement in such three dimensional structure. Detailed studies on the correlation between microcrystallite size and photoluminescence peak position or blueshift are now in grogress. Less
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入戸野修,竹本邦子: "可視発光多孔質シリコンの微細構造と結晶性" 日本結晶学会誌. 35. 340-346 (1993)
Osamu Nitono、Kuniko Takemoto:“可见光发光多孔硅的微观结构和结晶度”日本晶体学会杂志 35. 340-346 (1993)。
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作者:
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通讯作者:
E.ARAI,A.ZOUNECK,M.SEKINO,K.TAKEMOTO and O.NITTONO: "Depth Profiling of Porous Silicon Surface by Means of Heavy-ion TOF ERDA" Nucl.Inst. & Meth.B85. 226-229 (1994)
E.ARAI、A.ZOUNECK、M.SEKINO、K.TAKEMOTO 和 O.NITTONO:“利用重离子 TOF ERDA 对多孔硅表面进行深度分析”Nucl.Inst。
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Osamu NITTONO et al.: "X-ray Intensity Distribution around the Reciprocal Lattice Points for Porous Silicon Produced by Electrochemical Anodization" Photon Factory Activity Report :. 10. 333 (1993)
Osamu NITTONO 等人:“电化学阳极氧化生产的多孔硅的倒易晶格点周围的 X 射线强度分布”光子工厂活动报告:。
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T.MITSUI,N.YAMAMOTO.K.TAKEMOTO and O.NITTONO: "Cathodoluminescence and Electron Beam Irradiation Effect of Porous Silicon Studied by Transmission Electon Microscopy" Jpn.J.Appl.Phys.33. L342-344 (1994)
T.MITSUI、N.YAMAMOTO.K.TAKEMOTO 和 O.NITTONO:“通过透射电子显微镜研究多孔硅的阴极发光和电子束辐照效应”Jpn.J.Appl.Phys.33。
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通讯作者:
入戸野修,竹本邦子: "X-ray Intensity Distribution around the Reciprocal Lattice Points for Porous Silicon Produced by Electrochemical Anodization" PPHOTON FACTORY ACTIVITY REPORT. 10. 333 (1993)
Osamu Nitono、Kuniko Takemoto:“电化学阳极氧化生产的多孔硅的倒易晶格点周围的 X 射线强度分布”PPHOTON 工厂活动报告 10. 333 (1993)。
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共 16 条
Fabrication of semi-conductor titanium oxide films containing isolated fine iron-based metal particles and measurement of the GMR effect under illumination of UV light
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批准号:15360331
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项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.54万
-
财政年份:2003
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负责人:NITTONO Osamu
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依托单位:
Microstructure and Physical Properties of Magnetic Particles Embedded in Semiconductor AIN Films Having Highly Thermal Conductivity
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批准号:09450234
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.55万
-
财政年份:1997
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负责人:NITTONO Osamu
-
依托单位:
Study on Phase Transformations for New Materials and under Special Conditions
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批准号:09242104
-
项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$61.63万
-
财政年份:1997
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负责人:NITTONO Osamu
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依托单位:
Study of Phase Changes and Physical Properties in Iron Nitride Films Prepared by Reactive Sputtering
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批准号:63460191
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.42万
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财政年份:1988
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负责人:NITTONO Osamu
-
依托单位:
Preparation of stable iron nitride films by high speed reactive sputtering
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批准号:63850152
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$3.39万
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财政年份:1988
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负责人:NITTONO Osamu
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依托单位:
海外基金