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Activation of Photoelectrochemical Reaction for High Temperature Oxidation Film by Non-stoichiometry Control

非化学计量控制激活高温氧化膜光电化学反应

基本信息

批准号：
06650792
负责人：
HARA Motoi
金额：
$ 1.54万
依托单位：
Akita University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

The effect of non-stoichiometry control of oxide on photoelectrochemical characteristics of oxide films formed by high temperature oxidation of metals was investigated. The non-stoichiometry of the oxide films was controlled by a hydrogen reduction treatment and a control of oxygen pressure for preparation of oxide films by the high temperature oxidation of metals. For rutile-TiO_2 film (n-type conduction) formed by the high temperature oxidation of titanium, oxide ion vacancies in the oxide film were introduced by the hydrogen reduction treatment and a lowering of oxygen pressure for the preparation of the films. Photo-anodic current was increased with an increase in the reduction temperature and with the lowering of oxygen pressure for the preparation of film. This suggests that the photo-anodic reaction is activated by the introduction of oxide ion vacancies into the oxide film. For beta-Ta_2O_5 film (n-type conduction) formed by high temperature oxidation of tantalum, the photoanodic current increased with increasing temperature for the hydrogen reduction. It was found from these results that the photo-anodic reaction for oxide semiconductor having n-type conduction was activated by the introduction of oxide ion vacancies into the oxide. For Cu_2O film (p-type conduction) formed by high temperature oxidation of copper, photo-cathodic reaction was activated by a hydrogen reduction at low temperature, by which oxide ion vacancies were induced.Consequently, it has become apparent that the introduction of oxide ion vacancy into oxide film activated the photoelectrochemical reaction for oxide semiconductor electrode without depending on the conduction type.

研究了氧化物非化学计量控制对金属高温氧化膜光电化学特性的影响。氧化膜的非化学计量通过氢还原处理和用于通过金属的高温氧化制备氧化膜的氧压的控制来控制。对于钛高温氧化形成的金红石型TiO_2薄膜（n型导电），通过氢还原处理和降低氧分压的方法，在氧化膜中引入氧离子空位。光阳极电流随还原温度的升高和氧分压的降低而增大。这表明，光阳极反应是通过将氧化物离子空位引入到氧化膜中来激活的。对于钽高温氧化形成的β-Ta_2 O_5膜（n型导电），氢还原的光阳极电流随温度的升高而增大。从这些结果发现，具有n型导电的氧化物半导体的光阳极反应通过将氧化物离子空位引入氧化物中而被激活。对于铜高温氧化形成的Cu_2O膜（p型导电），低温氢还原激活了光电阴极反应，并诱导出氧离子空位，从而表明氧离子空位的引入激活了氧化物半导体电极的光电化学反应，而与导电类型无关。