Uniaxial stress-strain relationship of electronic materials in the non-linear regime (A10)

非线性状态下电子材料的单轴应力-应变关系 (A10)

• 批准号: 444817881
• 金额: --
• 依托单位: Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS)
• 依托单位国家: 德国
• 项目类别: CRC/Transregios
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/444817881?language=en
• 关键词: Uniaxial; stress; strain; relationship; electronic

To gain thermodynamic information on electronic phases under uniaxial stress, we will develop apparatus and methods for measurement of stress-strain curves of correlated electron materials. The technical goal is to trace arbitrary paths in stress-temperature space and measure the resulting strain. Materials with first-order electronic and structural transitions (CrAs, CaFe2As2, and EuRh2Si2) will be studied, to determine the effect of uniaxial stress on these transitions, and to probe whether critical endpoints can be reached. Fluctuations around these critical endpoints will be heavily influenced by electron-lattice coupling. The coupling between charge order and lattice deformation in BaNi2As2 will also be investigated.

为了获得单轴应力下电子相的热力学信息，我们将开发测量相关电子材料应力-应变曲线的仪器和方法。技术目标是追踪应力-温度空间中的任意路径并测量产生的应变。将研究具有一阶电子和结构转变的材料（CrAs， CaFe2As2和EuRh2Si2），以确定单轴应力对这些转变的影响，并探讨是否可以达到临界端点。在这些关键端点附近的波动将受到电子-晶格耦合的严重影响。研究了BaNi2As2中电荷顺序与晶格变形之间的耦合关系。