Development of High Power and Millimeter-long Wave Diamond Transistors Using Two Dimensional Hole Gas

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Metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated on diamond exhibiting high current, high frequency and high temperature performance. The maximum drain current density is above 1 A/mm and the highest transconductance is 400 mS/mm. These values are comparable to those of modern FETs made of Si or III-V semiconductors. Regarding RF performance, the highest cutoff frequency reaches nearly 50 GHz. The power handling capability exceeds those of Si and GaAs at 1 GHz. The operation temperature of diamond MOSFETs increased to be 400℃ indicating the stable operation of diamond transistor. Josephson junction devices composed of superconducting diamonds show the junction characteristic frequency in THz region.