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Molecular-level fundamentals for ultra-planarization and ultra-cleaning processes

超平坦化和超清洁工艺的分子水平基础

基本信息

批准号：
15206085
负责人：
HIGASHITANI Ko
金额：
$ 28.37万
依托单位：
Kyoto University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15206085/
关键词：
Atomic Force Microscope Frictional Forces Hydration Layers Lateral Force Microscope Molecular Dynamics Method Discrete Element Method Chemical Mechanical Polishing LFM CMP

项目摘要

Fine particles are frequently used as abrasives in ultra-planarization and ultra-cleaning processes for substrates, that is, chemical mechanical polishing (CMP). Understanding of the mechanism of CMP is indispensable for finer polishing. It is therefore necessary to understand surface forces and frictional forces between a particle and a substrate and between the particles. In this research project, we have elucidated at the molecular level the mechanism of frictional forces between a silica particle and a silicon wafer in aqueous electrolyte solutions. It is found that (1)as for monovalent electrolytes, the frictional force significantly decreases with increasing the electrolyte concentration and this order corresponds to the absolute value of hydration energy of the cations, indicating that the frictional force depends on the amount of free water around the cations ; (2)the frictional force is extremely sensitive to the molecular-scale roughness of the silica surfaces and significantly depends on the cleaning procedure of the surfaces ; (3)the frictional force complicatedly varies with the cationic valency, where it decreases with the hydration energy of divalent cations and then increases ; (4)as for trivalent cations, the mechanism of the frictional force is more complex due to the interaction of anions with the cations ; (5)the frictional force significantly decreases with increasing the solution pH, due to the presence of hairy layer with thickness of 1.0-1.5 nm formed at the silica surfaces at pH>10 ; (6)the relationship between the hairy layer and the electrolytes is rather complicated. Using computer simulations, we have investigated (1)how the frictional force between a particle and a smooth substrate depends on the force load and (2)how to remove the particulate contaminants on the smooth substrate.

细颗粒经常被用作基板的超平坦化和超清洁工艺，即化学机械抛光（CMP）中的磨料。了解 CMP 的机理对于更精细的抛光是必不可少的。因此，有必要了解颗粒与基材之间以及颗粒之间的表面力和摩擦力。在这个研究项目中，我们在分子水平上阐明了电解质水溶液中二氧化硅颗粒和硅片之间的摩擦力机制。研究发现：（1）对于一价电解质，随着电解质浓度的增加，摩擦力显着减小，且该量级对应于阳离子水合能的绝对值，表明摩擦力取决于阳离子周围自由水的量； (2)摩擦力对二氧化硅表面的分子级粗糙度极其敏感，并且显着取决于表面的清洁程序； (3)摩擦力随阳离子化合价复杂变化，随二价阳离子水合能先减小后增大； (4)对于三价阳离子，由于阴离子与阳离子的相互作用，摩擦力的机理更为复杂； (5)随着溶液pH值的增加，摩擦力显着降低，这是由于pH>10时二氧化硅表面形成了厚度为1.0-1.5 nm的毛状层； (6)毛层与电解质的关系较为复杂。通过计算机模拟，我们研究了（1）颗粒与光滑基材之间的摩擦力如何取决于力载荷以及（2）如何去除光滑基材上的颗粒污染物。