Synthesis of compound-semiconductor superlattice structures with isotopic modulation and their properties

成功地合成了同位素调制的超晶格结构的氧化锌（ZnO）、氮化镓（GaN）和氮化铝（AlN）宽带隙半导体。具有相同电子态和不同质量数的同位素被有意地分布在这些薄膜中。研究了薄膜的晶格振动、晶体学性质和光学性质的变化。此外，利用二次离子质谱（SIMS）技术精确测量了同位素的质量差，从而精确计算了扩散系数。基于这些实验结果，成功地阐明了薄膜的晶格缺陷结构和颗粒的生长机制。

The isotope-modulated superlattice structures of zinc oxide (ZnO), gallium nitride (GaN) and aluminum nitride (AlN), that are wide bandgap semiconductors, were synthesized successfully. The isotope with same electronic state and different mass number were intentionally distributed in these thin films. The changes of lattice vibrations, crystallographic properties and optical properties of these thin films were investigated. Furthermore, precisely measurements of the mass difference of isotope using a secondary ion mass spectrometry (SIMS) were carried out to calculate the diffusion coefficients exactly. Based on these experimental results, the lattice defect structure of thin films and the growth mechanism of particles were clarified successfully.