Novel delta doping technology with two or more dopants in silicon towards quantum information processing platform

硅中具有两种或多种掺杂剂的新型δ掺杂技术，用于量子信息处理平台

• 批准号: 19206003
• 负责人: MIKI Kazushi
• 金额: $ 25.88万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-19206003/
• 关键词: 結晶工学; 結晶成長; 半導体物性; 量子コンピュータ; MBE・エピタキシャル; MBE・エピタキシャル成長

A new technology that forms a δ layer with various elements dopants in the silicon, by combining two methods to dope elements with usage of characteristic surface structures and to move the doping atoms into substitutional sites to activate them by using a short laser annealing, was advocated. It was demonstrated that by choosing the bismuth atomic nanolines on the Si(001) surface as doping source, Bi atoms in the nanoline was partially changed into Er atoms, and both elements was doped into a δ layer in silicon crystal. Hybrid laser annealing, i.e., a serial combination of laser exposure and furnace annealing, is demonstrated to activate Bi donors that are δ-doped in Si. The photoluminescence reveals that the dense Bi atoms are activated so efficiently that an impurity band develops upon rapid radiation heating of the focused area close to the melting point of Si. The unintentional defects that are created thereby can be totally eliminated by subsequent furnace annealing at 390℃. The unintentional defects were characterized to be the G-centers and they get a lot of attention due to new photonic material for laser application. We propose a new method of creating G-centers in a surface region with highly dense carbon atoms of up to 4×10^<19>cm^<-3>, above the solubility limit of carbon atoms in silicon crystal.

提出了一种利用硅表面特征结构进行元素掺杂和利用短激光退火将掺杂原子移动到替代位置进行激活的方法相结合，在硅中形成多种元素掺杂的δ层的新技术。结果表明，通过选择Si（001）表面的Bi原子纳米线作为掺杂源，使Bi原子部分地转变为Er原子，并将两种元素掺杂到硅晶体中的δ层中。混合激光退火，即，一系列的激光曝光和炉退火的组合，被证明激活的Bi施主是δ掺杂的Si。的光致发光揭示了致密的Bi原子被激活，如此有效地，杂质带的发展后，快速辐射加热的聚焦区域接近Si的熔点。由此产生的无意缺陷可通过随后的390℃炉内退火完全消除。这些非故意缺陷被表征为G中心，并且由于用于激光应用的新光子材料而受到很多关注。我们提出了一种在表面区域产生G中心的新方法，该区域具有高达4×10^ cm^的高密度碳原子<19><-3>，高于硅晶体中碳原子的溶解度极限。

项目成果

Bowler Step structure of Si(110)-(16×2) and adsorption of H_2O.

Si(110)-(16×2)的Bowler Step结构及H_2O的吸附。

• 发表时间: 2010
• 期刊: Physical Review B 82
• 作者: Martin Setvin;Veronika Brazdova;Kazushi Miki;David R.
• 通讯作者: David R.

Site-specific evolution of surface stress during the room temperature oxidation of the Si(111)-(7 x7)

Si(111)-(7 x7) 室温氧化过程中表面应力的位点特定演变

• 发表时间: 2010
• 期刊: surface, Physical Review Letters 103
• 作者: N. T. Kinahan;D. E. Meehan;T. Narushima;S. Sachert;J. J. Boland;K. Miki
• 通讯作者: K. Miki

Strain field under SiO2/Si interface revealed by multiple X-ray diffraction phenomenon

多次X射线衍射现象揭示SiO2/Si界面下的应变场

• 发表时间: 2010
• 作者: Wataru Yashiro;Yoshitaka Yoda;Takashi Aratani;Akinobu Teramoto;Takeo Hattori;Kazushi Miki
• 通讯作者: Kazushi Miki

Electronic structure of the Si(110)-(16×2) surface

Si(110)-(16×2)表面的电子结构

• 发表时间: 2009
• 作者: Kazushi Miki;Kazuyuki Sakamoto;Martin Setvin;Kenji Mawatari;P. E. J. Eriksson;R. I. G. Uhrberg
• 通讯作者: R. I. G. Uhrberg

シリコン点欠陥 (G-center) 由来の狭帯域エレクトロルミネセンスとその温度依存性

硅点缺陷（G 中心）产生的窄带电致发光及其温度依赖性

• 发表时间: 2010
• 作者: 安武裕輔;大村史倫;田名網宣成;村田晃一;三木一司;深津晋
• 通讯作者: 深津晋