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Development of next generation far-infrared detector

Development of next generation far-infrared detector
下一代远红外探测器的研制
批准号:
20244016
负责人:
WADA Takehiko
金额:
$16.22万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2010

项目摘要

项目成果

WADA Takehiko的其他基金

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相关文献

中文摘要
翻译
我们开发了锗BIB探测器,用于未来的中、远红外天文任务。为了获得阻断层和红外活性层之间清晰的界面,我们测试了两种新方法:表面活化键合(SAB)和分子束外延(MBE)晶体生长。我们利用SAB技术在载流子浓度<8 × 10^12/cc的纯晶片和高掺杂晶片(Ga 10^16/cc)上结合制备了锗BIB探测器,发现该器件具有BIB探测器典型的I-V特性,延长了截止波长,减小了暗电流。我们还利用MBE技术在高掺杂晶片上实现了高纯度锗晶体的生长,该晶片的载流子浓度足够低,可以在BIB探测器中形成阻挡层(5x10^14/cc)。
英文摘要
We have developed germanium BIB detector for future mid- and far-infrared astronomical missions. In order to obtain clear interface between blocking and IR active layers, we have tested two new methods, surface activated bonding (SAB) and molecular beam epitaxial (MBE) crystal growth. We have fabricated a germanium BIB detector with SAB technique bonding a pure wafer (carrier concentration <8x10^12/cc) and a highly doped wafer (Ga 10^16/cc) and found that that device had a typical I-V characteristic for BIB detector, extended cut-off wavelength, and reduction of dark current. We have also achieved a high-purity germanium crystal growth on a high doped wafer with MBE technique that have a carrier concentration low enough for a blocking layer in BIB detector (5x10^14/cc).
期刊论文(30)
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会议论文
遠赤外線Ge:Ga接合素子の光感度特性の評価
远红外Ge:Ga结器件光敏特性评价
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [狩野良子, 和田武彦, 他]
通讯作者:
Electrical and Photoconductive Properties at 2 K of Germanium p+ -i Junction Device Fabricated by Surface-Activated Wafer Bonding
表面活化晶圆键合制造的锗 p -i 结器件在 2 K 下的电学和光电导性能
DOI: --
发表时间: 2011
期刊: JJAP (掲載決定)
影响因子: --
作者: [Hidehiro Kaneda, Takehiko Wada, Shinki Oyabu, Ryoko Kano, Yuichi Kiriyama, Yasuki Hattori, Toyoaki Suzuki Kensuke Ide, Masahiro Kato, Kentaroh Watanabe]
通讯作者: Kentaroh Watanabe
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [永田洋久, 和田武彦, 池田博一, 新井康夫, 大野守史]
通讯作者: 大野守史
常温ウェハ接合によるGep+-i接合素子の遠赤外線感度特性の評価
通过室温晶圆键合评估Gep+-i键合器件的远红外灵敏度特性
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [桐山雄一, 他]
通讯作者:
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