Development of cryogenic readout integrated circuit (ROIC) for next generation far-infrared imaging sensors

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We are developing cryogenic readout integrated circuit (ROIC) for far-infrared imaging sensors. We have evaluated characteristics of MOSFET fabricated by fully-depleted silicon on insulator (FD-SOI) technology and find that both p-channel and n-channel MOSFETs show excellent performance even at cryogenic temperature (below 4K). We have designed and fabricated circuit elements required for ROICs, such as operational amplifiers, analog switch, and digital circuit. We have found that operational amplifiers reported by Nagata et al. (2009) suffers from unexpected oscillation induced by parasitic capacitance of cables between cryogenic stage and room temperature stage. We have also found that the oscillation can be eliminated by applying a source follower buffer fabricated by FD-SOI CMOS technology. We also demonstrated that the analog switch has an off-leak current that is small enough for far-infrared imaging sensors. Finally we have successfully design and fabricated 2x2 array ROIC.