Development of cryogenic readout integrated circuit (ROIC) for next generation far-infrared imaging sensors

开发用于下一代远红外成像传感器的低温读出集成电路（ROIC）

• 批准号: 23340053
• 负责人: WADA Takehiko
• 金额: $ 11.07万
• 依托单位: Japan Aerospace Exploration Agency
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23340053/
• 关键词: 赤外線天文学; 極低温; 集積回路; 画像センサ; テラヘルツ; CMOS; FD-SOI; 画像センサー

We are developing cryogenic readout integrated circuit (ROIC) for far-infrared imaging sensors. We have evaluated characteristics of MOSFET fabricated by fully-depleted silicon on insulator (FD-SOI) technology and find that both p-channel and n-channel MOSFETs show excellent performance even at cryogenic temperature (below 4K). We have designed and fabricated circuit elements required for ROICs, such as operational amplifiers, analog switch, and digital circuit. We have found that operational amplifiers reported by Nagata et al. (2009) suffers from unexpected oscillation induced by parasitic capacitance of cables between cryogenic stage and room temperature stage. We have also found that the oscillation can be eliminated by applying a source follower buffer fabricated by FD-SOI CMOS technology. We also demonstrated that the analog switch has an off-leak current that is small enough for far-infrared imaging sensors. Finally we have successfully design and fabricated 2x2 array ROIC.

我们正在开发用于远红外成像传感器的低温读出集成电路（ROIC）。我们评估了采用全耗尽绝缘体上硅 (FD-SOI) 技术制造的 MOSFET 的特性，发现 p 沟道和 n 沟道 MOSFET 即使在低温（低于 4K）下也表现出优异的性能。我们设计并制造了ROIC所需的电路元件，例如运算放大器、模拟开关和数字电路。我们发现 Nagata 等人报道的运算放大器。 (2009) 遭受了低温阶段和室温阶段之间电缆的寄生电容引起的意外振荡。我们还发现，通过采用 FD-SOI CMOS 技术制造的源极跟随器缓冲器可以消除振荡。我们还证明了模拟开关的截止泄漏电流对于远红外成像传感器来说足够小。最终我们成功设计并制造了2x2阵列ROIC。

项目成果

Cryogenic CMOS analog switch for far-infrared image sensors

用于远红外图像传感器的低温 CMOS 模拟开关

• 发表时间: 2013
• 作者: Koichi Nagase;Takehiko Wada;Hirokazu Ikeda;Yasuo Arai;Morifumi Ohno
• 通讯作者: Morifumi Ohno

Development of Low Power Cryogenic Readout Integrated Circuits Using Fully-Depleted-Silicon-on-Insulator CMOS Technology for Far-Infrared Image Sensors

• DOI: 10.1007/s10909-012-0461-6
• 发表时间: 2012-01
• 期刊: Journal of Low Temperature Physics
• 影响因子: 2
• 作者: T. Wada;H. Nagata;H. Ikeda;Y. Arai;M. Ohno;K. Nagase

Molecular-beam epitaxial growth of a far-infrared transparent electrode for extrinsic Germanium photoconductors

用于外在锗光电导体的远红外透明电极的分子束外延生长

• 发表时间: 2012
• 期刊: PASP
• 作者: Toyoaki Suzuki;Takehiko Wada;Kazuyuki Hirose;Hironobu Makitsubo;and Hidehiro Kaneda
• 通讯作者: and Hidehiro Kaneda

サブ波長構造を利用した単一材料シリコン赤外線多層干渉フィルタ

采用亚波长结构的单材料硅红外多层干涉滤光片

• 发表时间: 2013
• 作者: 和田武彦;槙坪宏展;三田 信;鈴木仁研
• 通讯作者: 鈴木仁研

Development for germanium FIR image sensors

锗 FIR 图像传感器的开发

• 发表时间: 2013
• 作者: Takehiko Wada;Hidehiro Kaneda;Yasuo Arai;Yasuki Hattori;Hirokazu;Ikeda;Koudai Kobata;Koichi Nagase;Toyoaki Suzuki;Kotomi Tanaka;Kentaroh Watanabe;Hidehiko Nakaya;Morifumi Ohno;Shunsuke Baba;Chihiro Kochi
• 通讯作者: Chihiro Kochi