High performance organic field effect transistors using polydiactyelene solid-state polymerized films

在场效应晶体管中，聚二乙炔薄膜的最高载流子迁移率被限制在0.8 cm~(-2)V~(-1)S~(-1)以下，尽管主链导电性应该表现出更高的载流子迁移率。我们揭示了载流子迁移率低的原因是由于二乙炔单体聚合过程中体积变化产生的局部隆起区的存在。为了抑制隆起区的出现，我们发现电子束(EB)辐照是有效的，得到了最高的载流子迁移率μmax=3.8 cm·2V~(-1)S~(-1)。

The highest carrier mobility of polydiacetylene (PDA) thin films in field-effect transistors has been limited to less than 0.8cm^2 V-1 s-1, although the main chain conduction should show higher carrier mobility potentially. We revealed that the cause of the low carrier mobility is due to the presence of local upheaval regions generated by the volume change through the polymerization process of diacetylene monomers. In order to suppress the occurrence of the upheaval regions, we found that electron beam (EB) irradiation is effective, resulted in the highest carrier mobility of μmax=3.8cm^2V-1 s-1.