Compound semiconductor/silicon hybrid photonic crystal lasers

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We have demonstrated the world's first electrically pumped telecommunication-band quantum dot laser on a silicon substrate as a basis of photonic integrated circuits for next-generation low-power-consumption, high-speed computation and communication. We have also revealed the function of the metal thin film mediating the compound semiconductor quantum dot layer and the silicon substrate not only to enhance interfacial mechanical stability and electrical conductivity but also to suppress optical leakage from the laser cavity into the silicon substrate through electromagnetic calculations.