Development of low-cost, ultrahigh-efficiency compound semiconductor/silicon hybrid tandem solar cells

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We have generated an ohmic GaAs/Si bonded interface for the first time. This optically transparent, electrically conductive heterointerface can be applied for the creation of various novel high-performance compound semiconductor/silicon hybrid optoelectronic devices. By using the GaAs/Si bonding technique, we have successfully fabricated an AlGaAs/Si two-terminal dual-junction solar cell, the first bonded compound semiconductor/silicon hybrid multijunction solar cell. The fabricated dual-junction cell exhibits a high preliminary efficiency of 25% under a 1 sun (100 mW/cm2) illumination, demonstrating the validity of our bonding scheme for the realization of ultrahigh-efficiency lattice-mismatched multijunction solar cells.