Preparation and characterization of high quality bismuth ferrite based thin films-for improvement of piezoelectric and insulating properties-

通过原位观察电场作用下BiFeO_3 （BFO）薄膜的晶体结构变形，精确地研究了BFO薄膜的逆压电性能。此外，还首次采用离子束溅射工艺制备了高质量的BFO薄膜，并在室温下成功获得了铁电滞回线。此外，还获得了第一原理计算所期望的具有优异铁电性能的大c/a比BFO相。

Inverse piezoelectric properties of BiFeO_3 (BFO) thin films have been precisely investigated by in-situ observation of crystal structural deformation under an electric field. Moreover, ion beam sputtering process has been employed for high quality BFO thin film deposition for the first time, and ferroelectric hysteresis loops have been successfully obtained at RT. Furthermore, large c/a ratio BFO phase which is expected excellent ferroelectric properties by the first-principle calculation has also obtained.