Development of silicon quantum wire arrays for the next generation photovoltaics

以SiO2纳米粒子为刻蚀掩模，采用金属辅助化学刻蚀（MAE）方法成功制备了直径约为30 nm的硅纳米线阵列。光学测量表明，所制备的硅纳米线阵列具有较高的光限域效应。用原子层沉积法（ALD）制备了Al_2O_3薄膜，成功地覆盖了硅纳米线阵列的整个表面。因此，硅纳米线阵列的质量得到了提高。最后，制作了硅纳米线太阳能电池，并证实了光伏效应。

Using silica nanoparticles as an etching mask, SiNW arrays with the diameter of about 30 nm were successfully prepared by metal assisted chemical etching(MAE). Optical measurement revealed that prepared SiNW arrays have high optical confinement effect. The whole surface of SiNW arrays was successfully covered with Al_2O_3thin films deposited by atomic layer deposition(ALD). As a result, the quality of the SiNW arrays was improved. Finally, SiNW solar cells were fabricated and the photovoltaic effect was confirmed.