Development of silicon quantum wire arrays for the next generation photovoltaics

以二氧化硅纳米颗粒为蚀刻掩膜，采用金属辅助化学蚀刻（MAE）法制备了直径约30 nm的SiNW阵列。光学测量表明，制备的SiNW阵列具有良好的光约束效应。采用原子层沉积法（ALD）成功地在SiNW阵列表面覆盖了al_2o_3薄膜。结果，SiNW阵列的质量得到了提高。最后，制备了SiNW太阳能电池，并验证了其光伏效应。

Using silica nanoparticles as an etching mask, SiNW arrays with the diameter of about 30 nm were successfully prepared by metal assisted chemical etching(MAE). Optical measurement revealed that prepared SiNW arrays have high optical confinement effect. The whole surface of SiNW arrays was successfully covered with Al_2O_3thin films deposited by atomic layer deposition(ALD). As a result, the quality of the SiNW arrays was improved. Finally, SiNW solar cells were fabricated and the photovoltaic effect was confirmed.