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Study on evaluation method for luminescence efficiency and efficiency droop mechanism in III-nitride-based LEDs

Study on evaluation method for luminescence efficiency and efficiency droop mechanism in III-nitride-based LEDs
III族氮化物LED发光效率评价方法及效率下降机制研究
批准号：
23860062
负责人：
MUROTANI Hideaki
金额：
$1.75万
依托单位：
Toyota National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Research Activity Start-up
财政年份：
2011
资助国家：
日本
项目状态：
已结题
起止时间：
2011 至 2012
来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-23860062/
关键词：
電気・電子材料薄膜・量子構造窒化物半導体LEDフォトルミネッセンス電子・電子材料

项目摘要

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中文摘要
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英文摘要
The optical properties of InGaN alloy semiconductor systems have been studied by means of photoluminescence (PL) and time-resolved PL spectroscopy. On the basis of the evaluation of the internal quantum efficiency (IQE) and recombination dynamics of InGaN nanowires, the controversial issues of the estimation of IQE were clarified. Moreover, the mechanism of efficiency reduction under the higher excitation condition was discussed based on the analysis of the excitation power density dependence of IQE. It was found that the reduction of the IQE under higher excitation power density reflected the saturation of localized states by photo-generated excitons.
期刊论文(22)
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会议论文
Recombination dynamics of localized excitons in AlxGa1-xN (0.37<x<0.81) ternary alloys
AlxGa1-xN (0.37<x<0.81) 三元合金中局域激子的复合动力学
DOI： 10.1002/pssc.201000899
发表时间： 2011
期刊： Physica Status Solidi c
影响因子： --
作者： [H. Murotani, R. Kittaka, S. Kurai, Y.Yamada, H. Miyake, K. Hiramatsu]
通讯作者： K. Hiramatsu
Dependence of internal quantum efficiency on doping region and Siconcentration in Al-rich AlGaNternary alloy films probed by cross-sectional scanning near-fieldoptical microscopy
通过截面扫描近场光学显微镜探测富铝 AlGaN 三元合金薄膜中内量子效率对掺杂区域和 Si 浓度的依赖性
DOI： 10.1143/jjap.51.035604
发表时间： 2012
期刊： Japanese Journal of Applied Physics
影响因子： 1.5
作者： [H. Murotani, K. Anai, D. Akase, Y.Yamada, H. Miyake, K. Hiramatsu]
通讯作者： K. Hiramatsu
Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
DOI： 10.1063/1.4739431
发表时间： 2012-07
期刊： Applied Physics Letters
影响因子： 4
作者： [Hideaki Murotani;Daiki Akase;Koji Anai;Y. Yamada;H. Miyake;K. Hiramatsu]
通讯作者： Hideaki Murotani;Daiki Akase;Koji Anai;Y. Yamada;H. Miyake;K. Hiramatsu
Recombination dynamics of localized excitons in InGaN nanowires
InGaN 纳米线中局域激子的复合动力学
DOI： --
发表时间： 2013
期刊：
影响因子： --
作者： [H. Murotani, R. Kittaka, S. Kurai, Y.Yamada, H. Miyake, K. Hiramatsu, 室谷英彰,安藤浩哉,塚本武彦,杉浦藤虎,山田陽一,田畑拓也,本田善央,山口雅史,天野浩, Hideaki Murotani]
通讯作者： Hideaki Murotani
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