Study on evaluation method for luminescence efficiency and efficiency droop mechanism in III-nitride-based LEDs

III族氮化物LED发光效率评价方法及效率下降机制研究

• 批准号: 23860062
• 负责人: MUROTANI Hideaki
• 金额: $ 1.75万
• 依托单位: Toyota National College of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Research Activity Start-up
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-23860062/
• 关键词: 電気・電子材料; 薄膜・量子構造; 窒化物半導体; LED; フォトルミネッセンス; 電子・電子材料

The optical properties of InGaN alloy semiconductor systems have been studied by means of photoluminescence (PL) and time-resolved PL spectroscopy. On the basis of the evaluation of the internal quantum efficiency (IQE) and recombination dynamics of InGaN nanowires, the controversial issues of the estimation of IQE were clarified. Moreover, the mechanism of efficiency reduction under the higher excitation condition was discussed based on the analysis of the excitation power density dependence of IQE. It was found that the reduction of the IQE under higher excitation power density reflected the saturation of localized states by photo-generated excitons.

利用光致发光（PL）和时间分辨PL谱研究了InGaN合金半导体系统的光学性质。在对InGaN纳米线的内量子效率和复合动力学进行评估的基础上，澄清了估算内量子效率中存在的争议。此外，在分析量子效率与激发功率密度关系的基础上，讨论了高激发条件下效率降低的机理。结果表明，高激发功率密度下量子效率的降低反映了光生激子局域态的饱和。

项目成果

Recombination dynamics of localized excitons in AlxGa1-xN (0.37<x<0.81) ternary alloys

AlxGa1-xN (0.37<x<0.81) 三元合金中局域激子的复合动力学

• DOI: 10.1002/pssc.201000899
• 发表时间: 2011
• 期刊: Physica Status Solidi c
• 作者: H. Murotani;R. Kittaka;S. Kurai;Y.Yamada;H. Miyake;K. Hiramatsu
• 通讯作者: K. Hiramatsu

Dependence of internal quantum efficiency on doping region and Siconcentration in Al-rich AlGaNternary alloy films probed by cross-sectional scanning near-fieldoptical microscopy

通过截面扫描近场光学显微镜探测富铝 AlGaN 三元合金薄膜中内量子效率对掺杂区域和 Si 浓度的依赖性

• DOI: 10.1143/jjap.51.035604
• 发表时间: 2012
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: H. Murotani;K. Anai;D. Akase;Y.Yamada;H. Miyake;K. Hiramatsu
• 通讯作者: K. Hiramatsu

Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells

• DOI: 10.1063/1.4739431
• 发表时间: 2012-07
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Hideaki Murotani;Daiki Akase;Koji Anai;Y. Yamada;H. Miyake;K. Hiramatsu

Recombination dynamics of localized excitons in InGaN nanowires

InGaN 纳米线中局域激子的复合动力学

• 发表时间: 2013
• 作者: H. Murotani;R. Kittaka;S. Kurai;Y.Yamada;H. Miyake;K. Hiramatsu;室谷英彰,安藤浩哉,塚本武彦,杉浦藤虎,山田陽一,田畑拓也,本田善央,山口雅史,天野浩;Hideaki Murotani
• 通讯作者: Hideaki Murotani

Time and Spatially Resolved Luminescence Spectroscopy of ZnO Nanostructures

• DOI: 10.1007/978-81-322-1160-0_9
• 发表时间: 2014
• 作者: Hideaki Murotani;Y. Yamada;D. Nakamura;T. Okada