Thin Film Growth around Misfit Dislocations
错位位错周围的薄膜生长
基本信息
- 批准号:11450005
- 负责人:
- 金额:$ 8.06万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B).
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2000
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Si/Ge hetero-structure has been paid much attention in Si-based two-dimensional confinement of electrons and holes, and also in self assembling of quantum dots recently. A key of these applications is the control of the growth mode at the strained hetero-interfaces. However, a detail of the Si layers growth on the Si_<1-x>Ge_x (001 ) surface is still not well investigated. Here, we report our study on the growth of Si layers on Si_<1-x>Ge_x/Si (001) surfaces using STM.First, we observed the surface morphology of the Si_<1-x>Ge_x (001) layers of various thickness grown on the Si (001) substrates. The surface of the 0.46nm thick Sil-xGex layer include many dimer vacancies in the 2x1 reconstruction. However, the step density was small enough to keep the surface flat as the Si (001) substrate. Increasing the thickness, the dimer vacancies aligned to lines to release the compressive strain on the Si_<1-x>Ge_x (001) surface. The distance between dimer vacancy lines reduced to 8a (a is the su … More rface unit cell length) on the Si_<1-x>Ge_x layer of 1.38nm thickness.On the surface with dimer vacancy lines, small terraces stacked to make the surface uneven. SA step tended to be rough while SB step became straight in contrast to the Si (001) 2x1 surface. At the surface of the Sil-xGex layer with the thickness over 2nm, pyramidal 3D islands with (105) facets were observed to nucleate.In Si deposition, the dimer vacancies disappeared and many small terraces appeared in the initial stage on the Si_<1-x>Ge_x (001) layer of 0.46nm thickness. The terrace size became larger and the surface recovered smoothness in further deposition of Si. On the Si_<1-x>Ge_x (001) layer of 1.38nm thickness, patchy small terraces disappeared and the surface became smoother in the Si deposition. But, the dimer vacancy lines still persisted for the Si coverage up to 1nm, probably due to the segregation of Ge. In the conference, more details of the morphological change on the Si layers grown on the Si_<1-x>Ge_x (001) surface will be presented, and will be discussed from the viewpoints of the accumulation and release of stain and Ge out-diffusion on the growth front. Less
近年来,Si/Ge异质结在Si基电子和空穴的二维限制以及量子点的自组装方面受到了广泛的关注。这些应用的关键是应变异质界面的生长模式的控制。然而,Si_<1-x>Ge_x(001)表面上Si层生长的细节仍然没有得到很好的研究。本文报道了利用STM在Si_<1-x>Ge_x/Si(001)表面生长Si层的研究。首先,我们观察了<1-x>在Si(001)衬底上生长的不同厚度的Si_ Ge_x(001)层的表面形貌。0.46nm厚的Si 1-xGex层的表面在2x 1重构中包括许多二聚体空位。然而,台阶密度足够小以保持表面平坦,如Si(001)衬底。随着厚度的增加,二聚体空位沿直线排列,从而释放Si_<1-x>Ge_x(001)表面的压应变。二聚体空位线之间的距离减小到8a(a是表面空位)。 ...更多信息 在<1-x>厚度为1.38nm的Si_ Ge_x层上,由于二聚体空位线的存在,表面形成了小的台阶,使得表面不平整。与Si(001)2x 1表面相比,SA台阶趋于粗糙,而SB台阶变得直。在厚度大于2nm的Si_xGex层表面,观察到具有(105)晶面的三维锥形岛形核,在Si沉积过程中,在0.46nm的Si_ Ge_x(001)层上,二聚体空位消失,并在初始阶段出现许多小台阶<1-x>。随着Si的进一步沉积,台阶尺寸变大,表面恢复光滑。在<1-x>厚度为1.38nm的Si_ Ge_x(001)层上,沉积Si后,片状小台阶消失,表面变得更加光滑。但是,二聚体空位线仍然存在的Si覆盖到1 nm,可能是由于Ge的偏析。在会议上,将介绍更多关于Si_ Ge_x(001)表面上生长的Si层的形态变化的细节<1-x>,并将从生长前沿的应变积累和释放以及Ge外扩散的角度进行讨论。少
项目成果
期刊论文数量(24)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
H.Hirayama et al.: "Nucleation of Ag nanodots at the Si(III)3X1-Ag surfaces"Surface Science. (印刷中). (2001)
H. Hirayama 等人:“Si(III)3X1-Ag 表面的 Ag 纳米点的成核”《表面科学》(出版中)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
H.Hirayama et al: "Chain-left isomer of the π-borded chain reconstruction at the Ge(III)2X1"Physical Review. B62. 6900-6903 (2000)
H. Hirayama 等人:“Ge(III)2X1 的 π 边界链重建的链左异构体”物理评论 B62 (2000)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
H.Hirayama et al.: "Optical Second Harmonic Generation Spectrum of Ag/Si(III) reconstructer surfaces"Physical Review. B63(印刷中). (2001)
H. Hirayama 等人:“Ag/Si(III) 重建器表面的光学二次谐波生成谱”物理评论 B63(出版中)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
H.Hirayama et al: "Optical Second Harmonic Generation Spectrum of Ag/Si (111) Reconstructed Surfaces"Physical Review. B63 (in press).
H.Hirayama 等人:“Ag/Si (111) 重构表面的光学二次谐波产生谱”物理评论。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
H.Hirayama et al: "Chain-left isomer of the π-bonded chain Reconstruction at the Ge {111} 2x1"Physical Review. B62. 6900-6903 (2000)
H. Hirayama 等人:“Ge {111} 2x1 处 π 键合链的左链异构体重建”物理评论 B62(2000 年)。
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- 影响因子:0
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HIRAYAMA Hiroyuki其他文献
HIRAYAMA Hiroyuki的其他文献
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{{ truncateString('HIRAYAMA Hiroyuki', 18)}}的其他基金
Spin-flip scattering of Rashba-induced spin-split surface band electrons by magnetic atoms
磁性原子对 Rashba 诱导的自旋分裂表面带电子的自旋翻转散射
- 批准号:
25600095 - 财政年份:2013
- 资助金额:
$ 8.06万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Quasi-particle interference in a spin-split surface band and its application to spin filters
自旋分裂表面带中的准粒子干涉及其在自旋滤波器中的应用
- 批准号:
22360019 - 财政年份:2010
- 资助金额:
$ 8.06万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Quantization of surface electrons and their applications to construction of artificial atoms and molecules
表面电子的量子化及其在人造原子和分子构建中的应用
- 批准号:
18360020 - 财政年份:2006
- 资助金额:
$ 8.06万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Height Control of Metallic Nanoislands by Quantum Confinement
通过量子限制控制金属纳米岛的高度
- 批准号:
15360018 - 财政年份:2003
- 资助金额:
$ 8.06万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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