Fabrication of 3D Photospinic Crystals

3D 光脊柱晶体的制造

• 批准号: 11450004
• 负责人: MORISHITA Yoshitaka
• 金额: $ 9.54万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450004/
• 关键词: Photonic crystals; Nano-spinics; Semiconductor quantum dots; Photonics; Anodization; Photonic bandgap; Quantum dots; Ferromagnet; semiconductor heterostructures; 幅射場; 磁性体量子ドット; 陽極化成

In order to fabricate and investigate spin-controlled photonic crystals, the pillar structures of triangular arrays with high aspect ratio were fabricated. The dot mask of triangular array was patterned on GaAs surfaces by electron beam lithograph. The patterned substrate was next etched with BCl_3 flow. SEM images of the samples showed pillar structures with the aspect ratio of 6.6〜10. In orde to form 3D photonic crystals, these structures were buried by SiO_2 using TEOS-PECVD.As another fabrication technique of photonic crystals, GaAs wafers were anodized with NH_4OH electrolyte under the following conditons ; the external magnetic field was applied in perpendicular or parallel to the GaAs (001) surface. As a resit, we succeeded in forming high-odered honeycomb hollow arrays. Moreover, MBE growth of InAs on there honeycomb hollows led to controling the site of InAs dotsConcerning spin-related phenomena, MnAs/GaAs heterostructures were grown on GaAs substrates with V-grooves by MBE. VSM measurements of these samples showed that double-step magnetic hysteresis features were observed.

为了制备和研究自旋控制光子晶体，制备了具有高深宽比的三角形阵列柱状结构。用电子束光刻法在GaAs表面形成三角形点阵掩模图形。接着用BCl_3流蚀刻图案化的衬底。样品的SEM图像显示具有6.6 × 10的纵横比的柱状结构。作为光子晶体的另一种制备方法，我们采用NH_4OH电解液对GaAs晶片进行阳极氧化，外加磁场垂直或平行于GaAs（001）表面。作为一个resit，我们成功地形成了高有序蜂窝空心阵列。此外，分子束外延（MBE）在蜂窝状空洞上生长InAs，可以控制InAs点的位置。针对自旋相关现象，采用MBE方法在带有V形槽的GaAs衬底上生长了MnAs/GaAs异质结构。样品的VSM测量结果表明，样品具有双阶磁滞回线特征。

项目成果

石橋 隆幸: "Monequilibrium microwave emission due to tunnel injection of quasiparticles into a high-Tc Bi2SR2CaCu2Oy superconductor"Phys.Rev.. B61. 689-693 (2000)

Takayuki Ishibashi：“由于准粒子隧道注入高温 Bi2SR2CaCu2Oy 超导体而产生的非平衡微波发射”Phys.Rev.. B61 (2000)。

森下 義隆: "Molecular-beam epitaxy of InAs on GaAs substrates with hole arrays patterned by focused ion beams"J. Crystal Growth. (印刷中).

Yoshitaka Morishita：“GaAs 基板上的 InAs 分子束外延，通过聚焦离子束形成图案的孔阵列”J。

森下義隆: "Crystal structures and magnetic properties of MnAs grown by molecular-beam epitaxy on the (111) A facets of V-grooved GaAs substratess"J.Crystal Growth. 209. 599-604 (2000)

Yoshitaka Morishita：“通过分子束外延在 V 型槽 GaAs 基板的 (111) A 面上生长的 MnAs 的晶体结构和磁性”J.Crystal Growth 209. 599-604 (2000)。

Y.Morishita, S.Kawai, J.Sunagawa, T.Suzuki: "Magnetic-field assisted anodization of GaAs"Electrochemical & Solid-state Letters. 4. G4-G6 (2001)

Y.Morishita、S.Kawai、J.Sunakawa、T.Suzuki：“GaAs 的磁场辅助阳极氧化”电化学

森下義隆: "Magnetic-field assisted anodization of GaAs"7th Int. Workshop Femtosecond Tech.. 193 (2000)

Yoshitaka Morishita：“GaAs 的磁场辅助阳极氧化”第 7 届国际飞秒技术研讨会 193 (2000)