Fabrication of high-ordered hole arrays by anodization of GaAs substrates and their optical poperties

GaAs衬底阳极氧化制备高序孔阵列及其光学性能

• 批准号: 12555004
• 负责人: MORISHITA Yoshitaka
• 金额: $ 8.58万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555004/
• 关键词: Photonic crystals; Anodization; Quantum dots; Semiconductor; Molecular beam epitaxy

We have proposed a novel method for controlling the site of InAs dots using molecular-beam epitaxial(MBE) growth on anodized (001) GaAs substrates. InAs dots were selectively grown at the bottom of hollows formed by anodization of GaAs in an NH_4OH solution. However, the size variation of hollows strongly affected the size of InAs dots. In this study, we investigated on the effects of regularity of hollows which are formed by anodization of GaAs substrates on the MBE growth of InAs dots.After the anodizaiotn, scanning electron microscope images show that hollows were formed on the surface. In the case of the optimal anodization, the average diameter and the standard deviation of hollows were about 200 and 20 nm, respectively. In the case of a triangular pattern was formed on the substrate using electron beam lithography and dry etching technique before the anodization, the size variation was further improved.InAs dots were grown by MBE on honeycomb hollows formed by anodizatpn of GaAs substrates. In the case of the average diameter of hollows was about 80 nm, one InAs dot was selectively grown at each bottom of honeycomb hollows, and the average diameter of InAs dots was about 40 nm. Photolmninescence spectrum shows that a broad peak from quantum dots was observed at about 1.2 μm.

我们提出了一种利用分子束外延(MBE)技术在(001)氧化的GaAs衬底上控制InAs点位置的新方法。在氨水溶液中，在GaAs阳极氧化形成的空洞底部选择性地生长了InAs点。然而，空洞的尺寸变化对InAs点的尺寸有很大的影响。在本研究中，我们研究了GaAs阳极氧化形成的空洞的规律性对InAs点分子束外延生长的影响。阳极氧化后，扫描电子显微镜图像显示在表面形成了空洞。在最佳阳极氧化条件下，孔洞的平均直径约为200 nm，标准偏差约为20 nm。在阳极氧化前采用电子束曝光和干法刻蚀技术在衬底上形成三角形图形的情况下，进一步改善了尺寸变化。在空穴平均直径约为80 nm的情况下，在蜂窝空穴的每个底部选择生长一个InAs点，InAs点的平均直径约为40 nm。光致发光光谱表明，量子点在约1.2μm处有一个宽峰。

项目成果

森下 義隆: "Effects of regularity of honeycomb hollows formed by the anodization of GaAs substrates on the molecular-beam epitaxial growth of InAs quantum dots"7th Int. Workshop Femtosecond Technology. (発表). 192 (2000)

Yoshitaka Morishita：“GaAs 基板阳极氧化形成的蜂窝状空心的规律性对 InAs 量子点分子束外延生长的影响”，第 7 届国际飞秒技术研讨会（演示文稿）。

佐藤 勝昭: "Nonlinear magneto-optical Effect in Fe/Au superlattices modulated by non-integrated atomic layers"J.Appl.Phys.. 87. 6785-6787 (2000)

Katsuaki Sato：“非集成原子层调制的 Fe/Au 超晶格中的非线性磁光效应”J.Appl.Phys.. 87. 6785-6787 (2000)

T. Ishibashi, K. Yonemitsu, K. Inagaki and K. Sato: "Crystal Growth of BiSrCaCuO Thin Films on Submicron-size Step Structures"J. Cryst. Growth. 237-239. 762-776 (2002)

T. Ishibashi、K. Yonemitsu、K. Inagaki 和 K. Sato：“亚微米级台阶结构上 BiSrCaCuO 薄膜的晶体生长”J。

森下義隆: "Crystal structures and magnetic properties of MnAs grown by molecular-beam epitaxy on the (lll) A facets of V-grooved GaAs substratess"J.Crystal Growth. 209. 599-604 (2000)

Yoshitaka Morishita：“通过分子束外延在 V 槽 GaAs 基板的 (III) A 面上生长的 MnAs 的晶体结构和磁性”J.Crystal Growth。209. 599-604 (2000)。

Y. Morishita, Y. Sugawara, M. Itoh, and K. Sato: "Crystal structures and magnetic properties of MnAs grown by molecular-beam epitaxy on the (111)A facets of V-grooved GaAs substrates"J. Crystal Growth. 209. 599-604 (2000)

Y. Morishita、Y. Sukawara、M. Itoh 和 K. Sato：“在 V 型槽 GaAs 衬底的 (111)A 面上通过分子束外延生长的 MnAs 的晶体结构和磁性”J。