Fabrication, characterization arid application of GaAs hole arrays with high aspect ratio

高深宽比 GaAs 孔阵列的制备、表征和应用

• 批准号: 14350004
• 负责人: MORISHITA Yoshitaka
• 金额: $ 9.54万
• 依托单位: National University Corporation Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350004/
• 关键词: Photonic crystals; Anodization; Quantum dots; Semiconductor; Molecular beam epitaxy; フォトニック; フォトニクス

The effect of a magnetic field on the structural properties during anodization of GaAs substrates was investigated to gain insights into formation of ordered hole arrays on GaAs surfaces. It was found that Lorentz force induced by a magnetic field considerably affects formation of honeycomb hole arrays. In the case of the anodization with a magnetic field parallel to the surface, regularity of honeycomb holes was increased with increasing the magnetic field up to 1.5T. The size of honeycomb holes was also increased with increasing the magnetic field.The GaAs hole array with high-odered hole configuration was next prepared by a replication process using anodic porous alumina as a starting structure. The average diameter of porous alimina was 26 nm, and the density of porous alumina was 4×10^<10>cm^2 under an optimized condition. GaAs substrates covered by the porous alumia was then etched using BCl_3 in a dry-etching system. After removing porous alumina, high-odered hole arrays were formed on GaAs substrates. The average diameter of hole array was 23 nm, and the density of hole array was 4×10^<10>cm^2.InAs quantum dots were finally grown by molecular-beam epitaxy on the patterned GaAs substrates. It was found that some of InAs dots were selectively grown at the bottom of hole arrays. The average diameter of InAs quantum dots was 15 nm.

研究了磁场对GaAs衬底阳极氧化过程中结构特性的影响，以深入了解GaAs表面有序孔阵列的形成。结果表明，磁场诱导的洛仑兹力对蜂窝孔阵列的形成有重要影响。在平行于表面的磁场的情况下，蜂窝孔的规则性随着磁场的增加而增加，直到1.5T。蜂窝孔的尺寸也随着磁场的增加而增加。接下来，以阳极多孔氧化铝为起始结构，通过复制工艺制备了具有高有序度孔结构的GaAs孔阵列。在优化条件下制备的多孔氧化铝平均粒径为26 nm，密度为4×10^<10>cm ^2。然后用BCl_3在干法刻蚀系统中对多孔氧化铝覆盖的GaAs衬底进行刻蚀。去除多孔氧化铝后，在GaAs衬底上形成了有序孔阵列。孔阵列的平均直径为23 nm，孔阵列的密度为4×10^<10>cm ^2。结果表明，在孔阵列的底部有选择性地生长了一些InAs点。InAs量子点的平均直径为15 nm。

项目成果

Magneto-Optical Spectra of Ordered and Disordered FePt Films Prepared at Reduced Temperatures

• DOI: 10.3379/tmjpn2001.4.297
• 发表时间: 2004-11
• 期刊: Transactions of the Magnetics Society of Japan
• 作者: Katsuaki Sato;A. Mizusawa;K. Ishida;T. Seki;T. Shima;K. Takanashi

森下 義隆: "Molecular-beam epitaxial growth of InAs quantum dots on ordered hollows formed by anodization of GaAs substrates"10th Int.Workshop Femtosecond Technology. (発表). 167 (2003)

Yoshitaka Morishita：“在 GaAs 基板阳极氧化形成的有序空心上进行 InAs 量子点的分子束外延生长”第 10 届 Int.Workshop 飞秒技术（演示文稿）。

森下 義隆: "Fabrication and magnetic characterization of embedded permalloy structures"Trans.Magn.Soc.Jpn.. 3・3. 103-107 (2003)

森下芳隆：“嵌入坡莫合金结构的制造和磁特性”Trans.Magn.Soc.Jpn.. 103-107 (2003)

Magneto-optical and Reflectivity Studies in SrTiO_3

SrTiO_3 的磁光和反射率研究

• 发表时间: 2002
• 期刊: Trans.Magn.Soc.Jpn. 2
• 作者: 佐藤 勝昭

Effect of growth interruption on molecular-beam epitaxy of InAs quantum dots

生长中断对InAs量子点分子束外延的影响

• 发表时间: 2003
• 期刊: 10th Int.Workshop Femtosecond Technology (発表)
• 作者: 森下 義隆