Hot electron transistor using magnetic thin film as metal base

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A dependence of a current on magnetic field has been investigated for Si/Au/NiFe/Cu/Co/FeMn/Au/AlO and n-Si/Au/NiFe/Cu/Co/FeMn/Au films with 3 terminal structures. The 3 terminals are called a emitter, base and collector, respectively. The samples were prepared by RF/DC magnetron sputtering. A native oxide layer on Si wafer was removed by HF. In measurements of a current, two power sources were used for input and output biases. For the input bias, a constant current source or constant voltage source were used. The dependence of the base and the collector current on magnetic fields was measured for various output bias voltages at room temperature.A ratio of a current change depended on a bias voltage applied to a backside electrode. An about 400% of current change was obtained at room temperature at a bias voltage where the collector current was nearly zero. When the constant current source was used as the input bias, the collector current was increased at an antipararell alignment of magnetization in magnetic layers. However, the collector current was decreased, when the constant voltage source. Taking into account the measurement geometry and the variation of the collector current, the dependence of the collector current on the magnetic field was thought to be effect of the variation of the collector current on the magnetic field was thought to be effect of the variation of the impedance in the CIP geometry.