Research and development of selective area MOVPE process for the fabrication of monolithic OEIC devices

用于制造单片OEIC器件的选区MOVPE工艺的研究和开发

基本信息

批准号：
11555002
负责人：
SHIMOGAKI Yukihiro
金额：
$ 7.62万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555002/
关键词：
Compound Semiconductor Crystal Growth MOVPE Selective Growth Reaction Mechanism In Situ Monitoring Simulation Integration シミュレーション

项目摘要

This study focused on the research and development of Selective Area MOVPE process, which may be a good candidate to produce monolithically integrated optical devices known as OEIC. During the growth of InGaAsP based compound semiconductor thin films by MOVPE, film growth will occur only on the crystal surface, but not on the dielectric mask which is partly deposited on the GaAs or InP substrate. This process is called selective growth and in the case of compound semiconductor thin films, the growth rate will be enhanced by the area ratio of growth region and mask region. This is the reason why we call it Area Selective process and this is also the reason for utilizing this process to fabricate OEIC. SA-MOVPE has a potential to produce OEIC by making a suitable mask design to fabricate it. However, the lack of kinetic information makes it quite difficult, so that many researchers are making try & error efforts to make the devices. In this study, we investigated the gas-phase and surfac … More e reactions which may control the SA-MOVPE process.First, we employed CFD (Computer Fluid Dynamics) simulation to analyze the growth rate and composition profile in a commercial reactor from the inlet to the outlet. We have developed a reaction model that can explain the growth rate and composition profile in CFD calculation. The model proposed here could explain the growth rate and In/Ga ratio, which may explain the accuracy of our model. The As/P ratio could not well explained by this model, so there still remain a problem, but it is not so a serious issue, because most of the profile is determined by the group-Ill elements distribution.The growth rate and composition non-uniformity is also informative to analyze the reaction chemistry. When we grow InGaP, InGaAs, or InGaAsP, the In/Ga ratio in the selectively grown region has non-uniformity. We could analyze the reactive sticking probabilities of In species from the growth rate non-uniformity of InP growth and the reactive sticking probabilities of Ga species from growth rate non-uniformity of GaAs growth. We could find that the non-uniformity of In/Ga ratio was originated from the difference of sticking probabilities between In and Ga species. These kinetic information can be used to design optimum mask pattern to develop OEIC without any experimental trials. Less

这项研究的重点是选择性区域Movpe过程的研究和开发，这可能是生产单层集成的光学设备的好候选者。在基于INGAASP的复合半导体薄膜的生长过程中，膜的生长仅在晶体表面上发生，而不会在顽固的蒙版上发生，而不会部分沉积在GAAS或INP底物上。该过程称为选择性增长，在复合半导体薄膜的情况下，生长区域和面罩区域的面积比将提高生长速度。这就是我们将其称为区域选择过程的原因，这也是使用此过程制造OEIC的原因。 SA-Movpe有可能通过制作合适的面膜设计来制造OEIC。但是，缺乏动力学信息使它变得非常困难，因此许多研究人员正在尝试及错误地制作设备。在这项研究中，我们研究了气相和表面……更多的E反应可以控制SA-MOVPE过程。首先，我们采用了CFD（计算机流体动力学）仿真来分析从入口到出口的商业反应堆中的生长速率和组成曲线。我们已经开发了一个反应模型，可以解释CFD计算中的生长速率和组成曲线。这里提出的模型可以解释增长率和/ga比，这可以解释我们模型的准确性。该模型无法很好地解释AS/P比，因此仍然存在问题，但这不是一个严重的问题，因为大多数概况取决于组元素分布确定。生长速率和成分不均匀性也可以分析反应化学。当我们生长ingap，ingaas或ingaasp时，选择性生长区域的IN/ga比具有不均匀性。我们可以分析INP生长的生长速率不均匀性以及GA物种的反应性粘性可能性从GAAS生长的生长速率不均匀性而产生的反应性粘性可能性。我们可以发现，IN/GA比的不均匀性最初是由于IN和GA物种之间存在可能性的差异。这些动力学信息可用于设计最佳掩模模式以在没有任何实验试验的情况下开发OEIC。较少的