Nano-capacitor fabrication process development by using supercritical fluid
Nano-capacitor fabrication process development by using supercritical fluid
批准号:
22360329
负责人:
SHIMOGAKI Yukihiro
金额:
$12.48万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2012
中文摘要
研究了超临界CO2 (scCO2)纳米电容器用于dram和feram的工艺。将有机金属化合物溶解到scCO2中,并在加热的衬底上反应形成薄膜。超临界流体沉积(SCFD)工艺用于沉积Ru、Pt和SrRuO3作为电极。此外,还制备了高介电常数材料和铁电材料TiO2、SrTiO3和BiTiO3。所开发的工艺具有良好的台阶覆盖度,与CVD/ALD的常规工艺相同,且沉积温度较低。
英文摘要
Process for nano-capacitors to be used in DRAMs and FeRAMs using supercritical CO2 (scCO2) was developed. Organic metal compounds were dissolved into scCO2 and reacted to form thin films on a heated substrate. This process, Supercritical Fluid Deposition, SCFD, was used to deposit Ru, Pt, and SrRuO3 as an electrode. TiO2, SrTiO3, and BiTiO3 were also deposited as a high-dielectric constant material and ferroelectric material. The developed processes showed excellent step coverage like as the conventional processes of CVD/ALD with lower deposition temperature.
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Deposition Mechanism of Metal Oxide for FeRAM Electrode using Flow Type Supercritical Fluid Deposition Reactor
使用流动式超临界流体沉积反应器沉积 FeRAM 电极金属氧化物的机理
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Kyubong Jung, Yu Zhao, Takeshi Momose, and Yukihiro Shimogaki]
通讯作者:
and Yukihiro Shimogaki
超臨界流体を利用した次世代DRAM用高誘電体薄膜作製プロセスの開発
使用超临界流体开发下一代 DRAM 高介电薄膜制造工艺
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[渡邊圭, 百瀬健, 霜垣幸浩]
通讯作者:
霜垣幸浩
Step Coverage Quality of Cu Films by Supercritical Fluid Deposition Compared with Chemical Vapor Deposition
超临界流体沉积与化学气相沉积铜膜的阶梯覆盖质量比较
DOI:
--
发表时间:
2010
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Kenichiro Hirata, Shunsuke Gomi, Yasuhiro Mashiko, Shigeki Nakagawa, Takeshi Momose]
通讯作者:
Takeshi Momose
Initial Cu Growth in Cu-Seeded and Ru-Lined Narrow Trenches for Supercritical Fluid Cu Chemical Deposition
用于超临界流体铜化学沉积的铜籽晶和 Ru 衬里窄沟槽中的初始铜生长
DOI:
--
发表时间:
2010
期刊:
Jpn.J.Appl.Phys.
影响因子:
--
作者:
[E.Kondoh, M.Matsubara, K.Tamai, Y.Shimogaki]
通讯作者:
Y.Shimogaki
RuO2 Deposition Using Supercritical Fluid Deposition (SCFD)
使用超临界流体沉积 (SCFD) 沉积 RuO2
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[Kyubong Jung, Takeshi Momose, and Yukihiro Shimogaki]
通讯作者:
and Yukihiro Shimogaki
共 16 条
Advanced ULSI multilevel metallization using non-steady state by Flow Modulation technique
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批准号:11450269
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$7.74万
-
财政年份:1999
-
负责人:SHIMOGAKI Yukihiro
-
依托单位:
Research and development of selective area MOVPE process for the fabrication of monolithic OEIC devices
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批准号:11555002
-
项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.62万
-
财政年份:1999
-
负责人:SHIMOGAKI Yukihiro
-
依托单位:
国内基金
海外基金
硼碳氮体系等电子浓度规律及其薄膜合成研究
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批准号:50572012
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项目类别:面上项目
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资助金额:27.0万元
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批准年份:2005
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负责人:陆文琪
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依托单位:
C60薄膜合成、激光退火及其电学性质研究
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批准号:59282027
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项目类别:专项基金项目
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资助金额:5.5万元
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批准年份:1992
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负责人:戴国瑞
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依托单位: