Study on New Semiconductors for Temperature-insensitive Wavelength Semiconductor Lasers

温度不敏感波长半导体激光器新型半导体的研究

基本信息

  • 批准号:
    11555087
  • 负责人:
  • 金额:
    $ 8.77万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1999
  • 资助国家:
    日本
  • 起止时间:
    1999 至 2001
  • 项目状态:
    已结题

项目摘要

A new semiconductor material consisting of semiconductor and semimetal which has a temperature-insensitive band gap has been studied to develop a semiconductor laser whose wavelength does not change when the ambient temperature Changes. The detailed growth conditions and the characteristics of GaAs_<1-x>Bi_x semiconductor alloy layers have been studied. The lattice constants of the alloy were found to increase with the addition of Bi. The uniformity and the reproducibility of the solid composition of the GaAs_<1-x>Bi_x epilayers are good in spite of the difficulty of epitaxial growth. Although layer growth was performed at a low temperature, the stability of GaAs_<1-x>Bi_x alloy was sufficient for device processing. The photoluminescence (PL) spectra show that the PL peak energy of the GaAs_<1-x>Bi_x alloy shifts to a longer wavelength with increasing Bi content. The temperature dependence of the PL peak energy is much weaker than the temperature variation of the band gap of GaAs. The results obtained in this research support the hypothesis that III-V alloy semiconductors consisting of semiconductor and semimetal components have a temperature-insensitive band gap.To create a semiconductor material of optical fiber communication wavelength, GaInAsBi alloy has been targetted. The epitaxial growth of GaInAs, the host crystal of the alloy, was examined at low temperatures. Using new method, GaInAs layers of good optical quality were grown even at 420 C. However the growth temperature could not be lowered any further even using a new Ga precursor, TiPGa. New precursors of Ga and In which enable the growth of GaInAs at 365 C are expected, which will allow the growth of the new GaInAsBi alloy.
研究了一种由半导体和半金属组成的具有温度不敏感带隙的半导体材料,以研制出波长不随环境温度变化而变化的半导体激光器。研究了GaAs_Bi_x半导体合金层的生长条件和特性。<1-x>发现合金的晶格常数随着Bi的加入而增加。尽管外延生长困难,但GaAs_Bi_x外延层的固体成分均匀性和重复性良好。<1-x>虽然层生长在低温下进行,但GaAs_Bi_x合金的稳定性足以用于器件加工。<1-x>光致发光(PL)谱表明,随着Bi含量的增加,GaAs_Bi_x合金的PL峰能量向长波方向移动。<1-x>PL峰能量的温度依赖性比GaAs带隙的温度变化弱得多。本研究的结果支持了由半导体和半金属成分组成的III-V族合金半导体具有温度不敏感带隙的假设,并将GaInAsBi合金作为光纤通信波长的半导体材料。在低温下研究了合金的主晶GaInAs的外延生长。采用新的方法,即使在420 ℃下也生长出了光学质量良好的GaInAs层。然而,即使使用新的Ga前体TiPGa,也不能进一步降低生长温度。预期能够在365 C下生长GaInAs的Ga和In的新前体将允许新GaInAsBi合金的生长。

项目成果

期刊论文数量(75)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
K.Oe: "Characteristics of Semiconductor Alloy GaAsBi"Jpn. J. Appl. Phys.. (印刷中).
K.Oe:“半导体合金 GaAsBi 的特性”J. Appl.(出版中)。
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H.OFUCHI, T.KUBO, M.TABUCHI, Y.TAKEDA, H.OKAMOTO, and R.OE: "Fluorescence EXAFS study on local structures around Bi atoms in InAsBi grown by low-pressure MOVPE"Jpn. J. Appl. Phys.. Vol. 38, Suppl. 38-1. 545-547 (1999)
H.OFUCHI、T.KUBO、M.TABUCHI、Y.TAKEDA、H.OKAMOTO 和 R.OE:“低压 MOVPE 生长的 InAsBi 中 Bi 原子周围局部结构的荧光 EXAFS 研究”Jpn。
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K.Oe: "Metalorganic Vapor Phase Epitaxial Growth of Metastable GaAs_<1->Bix Alloy"J. Crystal Growth. (印刷中).
K.Oe:“亚稳态 GaAs_<1->Bix 合金的金属有机气相外延生长”J。
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K. OE: "Metalorganic Vapor Phase Epitaxial Growth of Metastable GaAsBi Alloy"Abstract of 13th International Conference on InP and Related Materials, Nara, May. 227 (2001)
K. OE:“亚稳态 GaAsBi 合金的金属有机气相外延生长”第 13 届 InP 及相关材料国际会议摘要,奈良,5 月。
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K.Oe: "Characteristics of the Semiconductor Alloy ; GaAs_<1->xBix"Japanese Journal of Applied Physics. (印刷中).
K.Oe:“半导体合金的特性;GaAs_<1->xBix”日本应用物理学杂志(正在出版)。
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OE Kunishige其他文献

OE Kunishige的其他文献

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{{ truncateString('OE Kunishige', 18)}}的其他基金

Research on GaInAAs semiconductor alloy for temperature-insensitive wavelength semiconductor lasers
温度不敏感波长半导体激光器用GaInAAs半导体合金的研究
  • 批准号:
    17360140
  • 财政年份:
    2005
  • 资助金额:
    $ 8.77万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study on (110)-QW Lasers with Low Threshold Current Density
低阈值电流密度(110)-QW激光器的研究
  • 批准号:
    11650346
  • 财政年份:
    1999
  • 资助金额:
    $ 8.77万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
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