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Research on GaInAAs semiconductor alloy for temperature-insensitive wavelength semiconductor lasers

温度不敏感波长半导体激光器用GaInAAs半导体合金的研究

基本信息

批准号：
17360140
负责人：
OE Kunishige
金额：
$ 9.47万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

项目摘要

Research of laser diodes whose wavelength do not fluctuate with ambient temperature variation is performed. A new semiconductor GaNAsBi alloy which has been created by our laboratory, was grown on n-GaAs substrate by molecular beam epitaxy (MBE) using solid Ga, Bi, As sources and nitrogen radicals generated from N_2 gas in rf plasma. The temperature dependency of its energy band is shown to be very small, 0.16meV/K, which is confirmed by photoluminescence (PL) measurement. The PL optical output from a GaNAsBi layer, which has two cleaved facets for Fabry-Perot cavity, was measured as a function of excitation optical power using 0.98μm pump laser as an excitation light source. Nonlinear increase in PL intensity has been observed at 100K by 400mW pump laser intensity. As excitation optical power of pump laser is limited, lasing was-not confirmed. To measure electroluminescence(EL) characteristics of GaNAsBi diodes, GaNAsBi/GaAs double-heterostructure (DH) was also grown by MBE. SiO_2 stripe laser structure was fabricated using conventional processing technique and sputtered SiO_2 film. The EL of the DH diodes was measured under pulse current condition at several temperatures using cryostat. The temperature dependence of the EL peak energy of the DH diodes was 0.09 nm/K in the temperature range of 100- 300K, much smaller than the temperature dependence of EL emission from GaInAsP/ InP DH diodes. The temperature dependence of the absorption edge is also measured and shown to be about 0.2 meV/K in the temperature range of 193-300K. This temperature-insensitive wavelength absorption characteristics of GaN_yAs_<1xy>Bi_x/GaAs DH diodes is also applicable to semiconductor optical modulator.Based on the research, a new semiconductor laser with small wavelength fluctuation with temperature variation might be obtainable by improving GaNAsBi alloy quality and laser processing technology.

对波长不随环境温度变化而波动的半导体激光器进行了研究。利用射频等离子体中N_2气体产生的氮自由基和固体Ga、Bi、As源，用分子束外延（MBE）方法在n-GaAs衬底上生长了一种新的半导体GaNAsBi合金。其能带的温度依赖性非常小，为0.16meV/K，这是由光致发光（PL）测量证实。用0.98μm泵浦光作为激发光源，测量了GaNAsBi层的光致发光输出随激发光功率的变化。在400 mW泵浦强度下，在100 K温度下观察到PL强度的非线性增加。由于泵浦激光器的激发光功率有限，不能证实激光。为了测量GaNAsBi二极管的电致发光（EL）特性，还采用MBE生长了GaNAsBi/GaAs双异质结（DH）。采用常规工艺和溅射SiO_2薄膜制备了SiO_2条形激光器结构。利用低温恒温器测量了DH二极管在不同温度下的电致发光。在100- 300 K温度范围内，DH二极管的EL峰值能量的温度依赖性为0.09nm/K，远小于GaInAsP/ InP DH二极管的EL发射的温度依赖性。在193- 300 K的温度范围内，测量了吸收边的温度依赖性，其值约为0.2meV/K。GaN_yAs_ Bi_x/GaAs DH二极管的这种温度不敏感的波长吸收特性<1xy>同样适用于半导体光调制器，在此基础上，通过改进GaNAsBi合金质量和激光加工工艺，有望获得波长随温度变化波动小的新型半导体激光器。