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Study on (110)-QW Lasers with Low Threshold Current Density

低阈值电流密度(110)-QW激光器的研究

基本信息

批准号：
11650346
负责人：
OE Kunishige
金额：
$ 0.64万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650346/
关键词：
semiconductor laser quantum well optical communication (110) face dry etching GalnAsP Ga In As GaInAs

项目摘要

Threshold current densities of (110)-QW lasers were investigated for wide stripes aligned in the [001] and [110] directions from the same wafer. As there is no cleaved facets for lasers along [001] direction, the mirror facets were formed parallel to the (001) face by reactive-ion-etching (RIE) using BBr_3gas. The threshold current densities of the lasers aligned in the [001] direction are found to be much smaller than those aligned in the [110] direction. This strong anisotropy in J_<th> is believed to come from the stronger oscillator strength in the [001] direction cavity and will be very useful to control polrization of laser output from surface emitting lasers (SELs) if the (110) QW structure is used for the SELs. Fairly low threshold current densities of less than 0.6 KA/cm2 were obtained for the lasers with cavities along [001] direction in spite of the lower reflectivity of the RIE-etched mirror surface. With improved mirror reflectivity of the dry-etched (001) face, lower threshold current density will be obtained for the (110)-oriented GaInAs (P) QW lasers.The results in this research show the expected advantage of the (110) lasers along [001] cavity direction and suggests an advantage of the (110) QW structure in the application for long wavelength surface emitting lasers. This research might be very useful for the development of long wavelength vertical cavity surface emitting lasers, as the lasers need more optical gain to compensate their low reflectance of the cavity mirrors and polarization control of the emitting light.

研究了同一晶片上沿[001]和[110]方向排列的宽条（110）量子阱激光器的阈值电流密度。由于激光器沿着[001]方向不存在解理面，因此采用BBr 3气体反应离子刻蚀（RIE）方法，在[001]面上形成了平行于[001]面的镜面。在[001]方向排列的激光器的阈值电流密度比在[110]方向排列的激光器的阈值电流密度小得多。这种强的各向异性<th>被认为来自于[001]方向腔中更强的振子强度，并且如果（110）QW结构用于表面发射激光器（SELs），则将非常有用地控制来自SELs的激光输出的偏振。腔体沿着[001]方向的激光器，尽管反射率较低，但阈值电流密度小于0.6KA/cm ~ 2。通过提高干法刻蚀（001）面的镜面反射率，（110）取向GaInAs（P）QW激光器将获得较低的阈值电流密度，研究结果显示了沿着[001]腔方向的（110）QW激光器的预期优势，表明了（110）QW结构在长波长面发射激光器应用中的优势。由于长波长垂直腔面发射激光器需要更大的光学增益来补偿腔镜的低反射率和对出射光的偏振控制，因此该研究对长波长垂直腔面发射激光器的发展具有重要意义。