Single Molecule STM Nanospectroscopy using Difference Frequency Generation at the Tunnel Gap
Single Molecule STM Nanospectroscopy using Difference Frequency Generation at the Tunnel Gap
批准号:
14350017
负责人:
MAEDA Koji
金额:
$9.54万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2004
中文摘要
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英文摘要
We have developed a new scheme of single-molecule-resolved nanospectroscopy (STM-DFG) that uses an intense infrared light locally generated at the tunnel gap of tip and sample in a scanning tunneling microscope (STM). The achievements are as follows. (1)Measurements of optical field enhancement at STM probe tips : From a tunneling current arising from a rectification of optical field at the tunnel gap due to the nonlinear I-V relation, we have measured for graphite samples the optical field enhancement factors as large as 10^3 and 5×10^2 even for W tips and Pt-Ir tips, respectively. (2)Proving difference frequency generation at a tunneling gap : For the combination of C_<60> film sample and W tip that was illuminated with two laser lights from a Ti-sapphire laser (wavelength fixed) and a diode laser (wavelength swept), we have successfully acquired spectra in agreement with infrared absorption by C_<60> crystals. (3)Field enhancement effect in carbon nanotubes (CNT) : We have found a remarkable enhancement of Raman scattering from N-Dimethyl formamide (DMF) molecules only when the DMF contained CNT and the excitation light is resonant (633nm) with CNT, a signature of the expected field enhancement effect of CNT. (4)STM observations of optical field enhancement effect : Using Au nano-rods as a model sample, we have developed an STM technique to observe directly the optical enhancement taking place at individual particles by detecting the local rectified current. (5)Optimum conditions for STM-DFG : We have concluded that it is most efficient to more intensely focus the light beam, to use pulsed laser lights, to increase the set tunneling current, and to use special materials (Ag, Au, CNT) for STM tips.
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K.Fukutani, A.Itoh, M.Wilde, M.Matsumoto: "Zero-point vibration of hydrogen adsorbed on Si and Pt surfaces"Phys.Rev.Lett.. 88・11. 116101-1-116101-4 (2002)
K.Fukutani、A.Itoh、M.Wilde、M.Matsumoto:“Si 和 Pt 表面吸附的氢的零点振动”Phys.Rev.Lett.. 88・11.116101-1-116101-4(2002 年) )
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D.Farias, R.Miranda, K.H.Rieder, W.A.Dino, K.Fukutani, T.Okano, H.Kasai, A.Okiji: "On the influence of incident angle in the scattering dynamics of D2 from NiA 1(110)"Chem.Phys.Lett.. 359. 127-134 (2002)
D.Farias、R.Miranda、K.H.Rieder、W.A.Dino、K.Fukutani、T.Okano、H.Kasai、A.Okiji:“入射角对 NiA 1(110) D2 散射动力学的影响”
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T.Meguro et al.: "Nanoscale Transformation of sp^2 to sp^3 of Graphite by Slow Highly Charged Ion Irradiation"Nuclear Intstrum. Methods B. 209. 170-174 (2003)
T.Meguro 等人:“通过慢速高电荷离子辐照将石墨的 sp^2 转化为 sp^3”核仪器。
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H.Amasuga, M.Nakamura, Y.Mera, K.Maeda: "The Atomic Processes of Ultraviolet-Laser-induced Etching of Chlorinated Silicon (111) Surface"Appl.Surf.Sci.. 197-198. 577-580 (2002)
H.Amasuga、M.Nakamura、Y.Mera、K.Maeda:“氯化硅 (111) 表面的紫外激光诱导蚀刻的原子过程”Appl.Surf.Sci. 197-198。
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Electronic Structure around an As Antisite near the (110) Surface of GaAs
GaAs (110) 表面附近的 As 反位周围的电子结构
DOI:
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发表时间:
2005
期刊:
Phys.Rev. B 71
影响因子:
--
作者:
[N.Naruse, Y.Mera, K.Maeda, 鈴木 茂, S.Liang, Shigeru Suzuki, Y Iguchi]
通讯作者:
Y Iguchi
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