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Manipulation of Atoms and Molecules by Electronic Excitation

通过电子激发操纵原子和分子

基本信息

批准号：
11222101
负责人：
MAEDA Koji
金额：
$ 9.15万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research on Priority Areas
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2002
项目状态：
已结题

项目摘要

This priority area project carried out in 1998- 2001 FY aimed to elucidate, with cooperation of 8 research groups sharing common material systems and thoughts, the whole picture of the mechanisms of electronic excitation induced atomic movements in semiconductors thereby developing novel techniques for manipulating atoms and molecules with high controllability (selectivity) and efficiency in solid materials that are expected to be useful for realization of next generation devices. The materials actually studied have included typical semiconductors such as Si, C and GaAs, and the electronic excitation methods have been based on photon illumination (laser and X-ray), particle beams (electron and ion), current injection, and charge state control. The activities this year, devoted to summarizing the 3 years project, have included two committee meetings of group leaders, an open workshop, and publication of a News Letter. Through these activities, we have proposed a general guide line for enhancing the efficiency and : the selectivity of atomic and molecular manipulation by electronic excitations : The material systems efficiently controllable should be defect centers in semiconductors possessing inherent structural instability due to orbitally-degenerate excited states, light elements such as hydrogens with high mobility in the excited states, defects or surfaces with structural flexibility, and carbon solids with flexible orbital hybridization. The use of long lifetime two-hole states generated by high density excitations, cooperative excitations and parallel processes will also promote the efficiency of the primary excitations. Further, to attain the site-selectivity expected in localized excitations, it is necessary to suppress the spatial spread of the excited electrons (holes) in the extended band states.

该优先领域项目于1998- 2001财政年度实施，目的是通过8个具有共同物质系统和思想的研究小组的合作，半导体中电子激发诱导原子运动的机制的全貌，从而开发出具有高度可控性的操纵原子和分子的新技术在固体材料中的选择性（选择性）和效率，预期可用于实现下一代器件。实际研究的材料包括典型的半导体，如Si，C和GaAs，电子激发方法基于光子照射（激光和X射线），粒子束（电子和离子），电流注入和电荷状态控制。今年的活动，致力于总结3年的项目，包括两个小组领导人委员会会议，一个公开研讨会，并出版了一封新闻信。通过这些活动，我们提出了提高效率的一般指导方针：通过电子激发进行原子和分子操纵的选择性：有效可控的材料系统应该是由于轨道简并激发态而具有固有结构不稳定性的半导体中的缺陷中心，轻元素如在激发态具有高迁移率的氢，具有结构柔性的缺陷或表面，以及具有柔性轨道杂化的碳固体。利用高密度激发、合作激发和并行过程产生的长寿命双空穴态也将提高主激发的效率。此外，为了获得在局域激发中预期的位置选择性，有必要抑制扩展带态中的激发电子（空穴）的空间扩散。