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Development of layered type CVD single aystal diamond radiation detectors

层状CVD单晶金刚石辐射探测器的研制

基本信息

批准号：
15360498
负责人：
KANEKO Junichi
金额：
$ 9.79万
依托单位：
Hokkaido University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

项目摘要

In this fiscal year, improvement on fabrication of layred type CVD diamond radiation detectors. In the previous year, we tried to fabricate the layred type CVD single diamond radiation detector by using a high-quality boron doped diamond layer that was flat in atom scale. However, this trial was failed because abnormal growth on the boron doped layer. Thus, we applied previously used process for fabrication of boron-doped layer. In this process, we found out that grown diamond layer obtained large influence from surface morphology of a type Ib single diamond substrate. Then, we evaluate a relation between mechanical polishing process and grown diamond layer. In previously used process, type Ib diamond substrate mechanically polished for one direction was used. Recently a diamond substrate supplier changed their way to polish a diamond substrate. The supplier polished a diamond substrate from random directions in order to obtained better optical flatness. However, this process destroyed surface crystal structure, and it resulted in bad quality in grown diamond layer. Then we asked to change the substrate supplier for their polishing process for suitable way to diamond growth, and it resulted in better growth of diamond layer. In addition, we tried to fabricate a layered type CVD diamond radiation detector by using high-quality single diamond substrate. This substrate include only 0.1 to 0.3 ppm of boron impurities and it was semiconductor. Moreover, charge carriers' transport phenomenon measurement system 213 nm UV pulse laser system was developed. Charge carriers' transport phenomenon in the layered type diamond radiation detectors, single and polycrystalline diamond were evaluated by using this system. 14 MeV neutron response function measurements using the layered type CVD single diamond radiation detector was carried out.

在本财政年度，改进了层状CVD金刚石辐射探测器的制造。在前一年中，我们尝试用原子尺度上平坦的高质量掺硼金刚石层制作层状CVD单金刚石辐射探测器。然而，由于硼掺杂层上的异常生长，该试验失败。因此，我们应用先前用于制造硼掺杂层的工艺。在此过程中，我们发现，生长的金刚石层获得很大的影响，从Ib型单金刚石衬底的表面形貌。然后，我们评估了机械抛光工艺和生长的金刚石层之间的关系。在先前使用的工艺中，使用了针对一个方向机械抛光的Ib型金刚石衬底。最近，金刚石基底供应商改变了他们抛光金刚石基底的方式。供应商从随机方向抛光金刚石衬底，以获得更好的光学平坦度。但这种方法破坏了金刚石表面的晶体结构，导致生长的金刚石层质量较差。然后我们要求改变衬底供应商的抛光工艺，以适合金刚石生长的方式，这导致了更好的金刚石层生长。此外，我们还尝试了用高质量的金刚石单晶衬底制作层状CVD金刚石辐射探测器。该衬底仅包含0.1至0.3ppm的硼杂质，并且它是半导体。此外，还研制了载流子输运现象测量系统.利用该系统对层状金刚石辐射探测器、单晶金刚石和多晶金刚石中的载流子输运现象进行了研究。使用分层型CVD单金刚石辐射探测器进行了14MeV中子响应函数测量。