Preparation of self-organized nano-structured thin film for the application to spin-devices

利用原位反射高能电子衍射和透射电子衍射显微镜证实了Ag电极上的AML[Fe/Co]n/Ag/AML[Fe/Co]n三外延层的结构特性。我们的自旋阀元件在室温（RT）下，即使在薄的AML[Fe/Co]n层，也证实了相当大的电阻面积乘积变化和MR比（△RA > 3Ωμm2and MR比>5%）。β f /N和γF/N的估计值分别为0.80和0.84±0.02。采用点接触Andreev反射（PCAR）方法获得了AML外延[Fe/Co]n超晶格的本态输运P值为0.60。获得了纳米接触磁流变器件的材料设计方案。

The structural properties of the full epitaxial trilayer, AML[Fe/Co]n/Ag/AML[Fe/Co]n, on the Ag electrode have been confirmed by in situ reflection high-energy electron diffraction and transmission electron diffraction microscopy. A considerably large resistance-area product change and MR ratio (△RA > 3Ωμm2and MR ratio ＞5%) were confirmed even at thin AML[Fe/Co]n layer at room temperature (RT) in our spin-valve elements. The estimated values of βFand γF/N were 0.80 and 0.84±0.02, respectively. The intrinsic transport P of 0.60 was obtained for the AML epitaxial [Fe/Co]n superlattice by the point contact Andreev reflection (PCAR) method.The material design for Nano-contact MR device was obtained.