Magnetic property control of GaN dilute magnetic semiconductors

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Band structure of 3d-transition metal doped III-nitrides have been investigated by using optical absorption and photoelectron yield spectroscopies. It was found that new energy states are formed in the intrinsic band gaps of GaN upon the 3d transition metal doping. Charge transport properties as a function of electrode metal work function indicate that carriers in the materials move in the new band and are consistent with the band structure deduced from the spectroscopic analyses.