权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Development of magnetoresistance sensing materials consisting of granulan materials with micro-patterned soft magnetic alloy films

微图案软磁合金薄膜颗粒材料磁阻传感材料的开发

基本信息

批准号：
12555183
负责人：
TAKANASHI Koki
金额：
$ 8.64万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

Currently, magnetic sensors have been important devices, and are actually used for many systems and purposes. Magnetic granular thin film is one of most important materials applicable to magnetic sensors because it can be made easily by a conventional sputtering technique. Furthermore, excellent field-sensitivity has been achieved in granular-in-gap (GIG) structures in which magnetic granular film is put in a lateral gap between a couple of soft magnetic alloy electrodes.In this study, we have investigated on (i) optimization of GIG structures, (ii) development of new structures for high field-sensitivity, (iii) development of new magnetic granular materials with large magnetoresistance, (iv) mechanism of the high field-sensitivity in GIG structures,(v) related magnetoresistance effects in GIG structures and (vi) development of actual GIG devices. By optimizing GIG structures, the magnitude and field-sensitivity of tunnel magnetoresistance are improved. This result is useful for preparing actual GIG devices. Concerning new materials, the largest room-temperature magnetoresistance has been found in CoFe-fluoride granular films, indicating that fluoride is a good barrier material for tunnel magnetoresistance. As a related magnetoresistance effect, enhanced magnetoresistance due to spin dependent single electron tunneling is observed at low temperatures in nanometer-sized GIG structures. Additionally, optimization of the electrical circuit for GIG sensors has been performed.

目前，磁传感器已经成为重要的设备，并且实际上用于许多系统和目的。磁性颗粒薄膜是应用于磁传感器的最重要的材料之一，因为它可以通过常规的溅射技术容易地制备。在本研究中，我们主要研究了（i）GIG结构的优化，（ii）开发新的高场敏结构，（iii）开发新的具有大磁电阻的磁性颗粒材料，（iv）开发新的高场敏结构，（iv）开发新的高场敏结构，（iv）开发新的高场敏结构，（iv）开发新的高场敏结构，（iv）GIG结构的高场敏感性的机理，（v）GIG结构中相关的磁阻效应，以及（vi）实际GIG器件的开发。通过优化GIG结构，提高了隧道磁电阻的幅值和场灵敏度。这一结果对实际GIG器件的制备具有指导意义。在新材料方面，CoFe氟化物颗粒膜的室温磁电阻最大，表明氟化物是一种很好的隧道磁电阻势垒材料。作为一个相关的磁阻效应，增强的磁阻由于自旋相关的单电子隧穿在低温下观察到纳米尺寸的GIG结构。此外，GIG传感器的电路的优化已经执行。