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Development of magnetoresistance sensing materials consisting of granulan materials with micro-patterned soft magnetic alloy films

微图案软磁合金薄膜颗粒材料磁阻传感材料的开发

基本信息

批准号：
12555183
负责人：
TAKANASHI Koki
金额：
$ 8.64万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

Currently, magnetic sensors have been important devices, and are actually used for many systems and purposes. Magnetic granular thin film is one of most important materials applicable to magnetic sensors because it can be made easily by a conventional sputtering technique. Furthermore, excellent field-sensitivity has been achieved in granular-in-gap (GIG) structures in which magnetic granular film is put in a lateral gap between a couple of soft magnetic alloy electrodes.In this study, we have investigated on (i) optimization of GIG structures, (ii) development of new structures for high field-sensitivity, (iii) development of new magnetic granular materials with large magnetoresistance, (iv) mechanism of the high field-sensitivity in GIG structures,(v) related magnetoresistance effects in GIG structures and (vi) development of actual GIG devices. By optimizing GIG structures, the magnitude and field-sensitivity of tunnel magnetoresistance are improved. This result is useful for preparing actual GIG devices. Concerning new materials, the largest room-temperature magnetoresistance has been found in CoFe-fluoride granular films, indicating that fluoride is a good barrier material for tunnel magnetoresistance. As a related magnetoresistance effect, enhanced magnetoresistance due to spin dependent single electron tunneling is observed at low temperatures in nanometer-sized GIG structures. Additionally, optimization of the electrical circuit for GIG sensors has been performed.

目前，磁性传感器已经成为重要的器件，并且实际上被用于许多系统和目的。磁性颗粒薄膜是制作磁性传感器的重要材料之一，因为采用传统的溅射方法可以很容易地制备出磁性颗粒薄膜。在本研究中，我们研究了(I)颗粒间隙结构的优化，(Ii)高场敏度新结构的开发，(Iii)新型大磁阻磁性颗粒材料的开发，(Iv)颗粒间隙结构高场敏感度的机理，(V)间隙颗粒结构中的相关磁阻效应，以及(Vi)实际间隙颗粒结构的开发。通过优化GIG结构，提高了隧道磁阻的大小和场敏特性。这一结果对于准备实际的GIG设备很有用。在新材料方面，在CoFe-氟化物颗粒膜中发现了最大的室温磁电阻，表明氟化物是一种良好的隧道磁阻势垒材料。作为一种相关的磁阻效应，在纳米GIG结构中，由于自旋相关的单电子隧穿效应在低温下被观察到增强的磁阻。此外，还对GIG传感器的电路进行了优化。