The study of magnetic properties of NiAs-type ferromagnetic/antiferromagnetic multilayer films
NiAs型铁磁/反铁磁多层薄膜的磁性能研究
基本信息
- 批准号:63540239
- 负责人:
- 金额:$ 1.28万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (C)
- 财政年份:1988
- 资助国家:日本
- 起止时间:1988 至 1989
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
NiAs-type multilayer films consisting of ferromagnetic MnSb and antiferromagnetic CrSb were prepared by a dual-type rf sputtering method on glass substrates. Two targets were used: one was a MnSb alloy target, and the other was a Cr target on which some Sb sheets were placed. The multilayer period was designed in the range from 50 to 200A^^゚, keeping the thickness of MnSb and CrSb layers equal. The X-ray diffraction results indicated that all the multilayer films had a strongly preferred [110] orientation perpendicular to the film plane. However, the multilayer periodicity was not confirmed because the atomic scattering factors of Mn and Cr are very close to each other. The magnetization at low temperatures measured in MnSb/CrSb multilayer films were somewhat larger than that in a MnSb compound. The Curie temperature was also found to decrease with decreasing the multilayer period. One reason of these results is considered to be the interdiffusion near the interface. The temperature dependence of magnetization showed a bend at about 100K and 180K. These bends are considered to result from the modulated exchange interaction.Heusler compound type multilayer films consisting of ferromagnetic PtMnSb and antiferromagnetic CuMnSb were also prepared. The magnetization behavior in PtMnSb/CuMnSb multilayer films showed two peculiar characteristics: (i) a great enhancement of magnetization at low temperatures, and (ii) a bend in the temperature dependence of magnetization at about 50K near the Neel temperature of CuMnSb. These results are of much interest, being similar to the MnSb/CrSb case. For the future, we must search for the systematic understanding of the magnetization behavior in the ferromagnetic/ antiferromagnetic multilayer films in terms of the modulated exchange interaction.
用双型射频溅射法在玻璃衬底上制备了由铁磁MnSb和反铁磁CrSb组成的NiAs型多层膜。使用两种靶:一种是MnSb合金靶,另一种是Cr靶,其上放置一些Sb片。多层周期设计在50 ~ 200埃的范围内,保持MnSb和CrSb层的厚度相等。X射线衍射结果表明,所有多层膜都具有垂直于膜面的强择优[110]取向。然而,由于Mn和Cr的原子散射因子彼此非常接近,因此未证实多层膜的周期性。MnSb/CrSb多层膜在低温下的磁化强度比MnSb化合物稍大。居里温度也被发现,减少多层周期。这些结果的一个原因被认为是界面附近的互扩散。磁化强度随温度的变化在100 K和180 K附近出现弯曲。我们还制备了由铁磁PtMnSb和反铁磁CuMnSb组成的Heusler复合型多层膜。PtMnSb/CuMnSb多层膜的磁化行为表现出两个独特的特征:(i)低温下磁化强度显著增强;(ii)在CuMnSb的Neel温度附近,磁化强度随温度的变化在50 K左右出现弯曲。这些结果是非常有趣的,类似于MnSb/CrSb的情况。今后,我们必须从调制交换相互作用的角度系统地理解铁磁/反铁磁多层膜的磁化行为。
项目成果
期刊论文数量(9)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Koki Takanashi: "Structure and Magneto-Optical Kerr Effect of PtMnSb-Based Multilayer Films" Proceedings of the MRS International Meeting on Advanced Materials. 10. 397-402 (1989)
Koki Takanashi:“PtMnSb 基多层薄膜的结构和磁光克尔效应”MRS 国际先进材料会议论文集。
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- 影响因子:0
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渡辺雅人: "ホイスラ-化合物型人工格子PtMnSb/CuMnSbの磁化異常と垂直磁気異方性" 日本応用磁気学会誌. 14. (1990)
Masato Watanabe:“Heusler化合物人工晶格PtMnSb/CuMnSb的磁化异常和垂直磁各向异性”日本应用磁学学会杂志14。(1990)
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- 影响因子:0
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Masato Watanabe: "Anomalous Behavior of Magnetization and Perpendicular Magnetic Anisotropy for Heusler Compound Type Multilayer Films, PtMnSb/CuMnSb" J. Magn. Soc. Jpn. (Nihon-oyojikigakkaishi) Vol.14, 1990.
Masato Watanabe:“Heusler 复合型多层薄膜 PtMnSb/CuMnSb 的磁化异常行为和垂直磁各向异性”J. Magn。
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- 影响因子:0
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Koki Takanashi: "Anomalous Behavior of Magnetization for PtMnSb/CuMnSb Multilayer Films" J.Appl.Phys.67. 393-397 (1990)
Koki Takanashi:“PtMnSb/CuMnSb 多层薄膜的磁化异常行为”J.Appl.Phys.67。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Koki Takanashi: "Structure and Magneto-Optical Kerr Effect of PtMnSb-Based Multilayer Films" Proceedings of the MRS International Meeting on Advanced Materials, Vol.10 pp.397-402, 1989.
Koki Takanashi:“PtMnSb 基多层薄膜的结构和磁光克尔效应”MRS 国际先进材料会议记录,第 10 卷,第 397-402 页,1989 年。
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- 影响因子:0
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TAKANASHI Koki其他文献
TAKANASHI Koki的其他文献
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金属超晶格的复兴
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寻找室温下具有巨大反常能斯特效应的材料
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交替原子单层沉积法制备高单轴磁各向异性L10型有序合金
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自组装横向纳米结构的制备及其在磁性材料中的应用
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微图案软磁合金薄膜颗粒材料磁阻传感材料的开发
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利用阶梯表面自组织制备磁性金属线及其在三维超晶格中的应用
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12450256 - 财政年份:2000
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Development of epitaxial growth technology on amorphous substrates and its application to magnetic thin films
非晶衬底外延生长技术进展及其在磁性薄膜中的应用
- 批准号:
09555205 - 财政年份:1997
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单原子层控制非平衡有序合金的人工制造及其磁性能
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08455316 - 财政年份:1996
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