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Low-temperature heteroepitaxy of compound semiconductors on silicon substrate

硅衬底上化合物半导体的低温异质外延

基本信息

批准号：
12555190
负责人：
OHYAMA Masanori
金额：
$ 7.17万
依托单位：
Tokyo National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555190/
关键词：
low temperature crystal growth layered compound semiconductor RF sputtering electron beam deposition Fan der Waals epitaxy optical property electronic phenomena silicon substrate ヘテロエピタキシーファンデルワールス結合テルル化ガリウムセレン化ガリウム硫化カリウム化合物

项目摘要

In this research, we have developed the process technology of the thin film crystal-growth perpendicular to c-axis on the silicon substrate using the layered compound semiconductors and investigated electronic phenomena. The epitaxial research of semiconductor films is usual based on considering the crystalline coordination between evaporation material and substrate material, but the crystal-growth technology based on the glass substrate is need for optical and electronic device applications. The crystalline thin films of III-VI family compound semiconductor have an optical-band-gap in visible-light region are successfully grown on the silicon substrate and fused silica substrate. And we also discussed about the low-temperature crystal-growth mechanism and the process condition of van der waals epitaxy for the layered compound semiconductors. These results are as follows :1) The low-temperature crystal-growth process have been proposed for the layered compound semiconductors (GaSe, GaS … More ) on the silicon substrate, and the base technologies of our process are developed using the conventional semiconductor process of the electron beam deposition method and RF-sputtering method.2) It is established that the GaSe thin film on the silicon substrate perpendicular c-axis is obtained by electron beam deposition method. The GaSe film as the substrate temperature is 500℃ have an optical energy gap of 2.0eV, and these samples are indicated highly sensitive to the photo conductive property.3) From the proposed film-growth process using the exciting film-surface charge method we are obtained a good knowledge for the crystal growth mechanism of the grapho-epitaxy on the silicon substrate.4) From the electron (energy) shower-assist process, the crystalline GaS films along c-axis are obtained at substrate temperature lower than 300℃ based on the silicon substrate.Finally, these proposed processes based on the conventional process of the electron beam deposition method are enabling technology to deposit on the large substrate area, and it is established that the GaSe and GaS crystalline films are applicable to the photo sensor device and the intelligent device. Less

在本研究中，我们开发了使用层状化合物半导体在硅衬底上垂直于c轴生长薄膜晶体的工艺技术，并研究了电子现象。半导体薄膜的外延研究通常是基于蒸发材料与衬底材料之间的晶体配位，而基于玻璃衬底的晶体生长技术是光学和电子器件应用的需要。在硅衬底和熔融石英衬底上成功地生长了具有可见光带隙的Ⅲ-Ⅵ族化合物半导体晶体薄膜。并讨论了层状化合物半导体低温晶体生长机制和货车德瓦尔斯外延工艺条件。主要结果如下：1）提出了层状化合物半导体（GaSe，GaS）的低温晶体生长工艺 ...更多信息 2）确定了采用电子束沉积法在硅衬底上制备垂直于c轴方向的GaSe薄膜。在衬底温度为500℃时，GaSe薄膜的光学能隙为2.0eV，对光电导性能具有很高的敏感性。3）从激发膜-表面电荷法的薄膜生长过程中，我们对硅衬底上图形外延的晶体生长机理有了很好的认识。最后，在传统的电子束沉积工艺的基础上，提出了在大面积衬底上沉积GaSe和GaS晶体薄膜的工艺，并确定了GaSe和GaS晶体薄膜在光传感器件和智能器件中的应用。少

项目成果

期刊论文数量（62）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Hiroshi Ito and Masanori Ohyama: "Thin film growth of layered semiconductor GaSe prepared by electron beam deposition method"Journal of the vacuum society of Japan. Vol.46, No.3. 314-317 (2003)

Hiroshi Ito和Masanori Ohyama：“电子束沉积法制备的层状半导体GaSe的薄膜生长”日本真空学会杂志。

DOI：
发表时间：
期刊：
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通讯作者：

小林勇介, 角倉大輔, 鈴木敬匡, タンコッスーン, 伊藤浩, 大山昌憲, 藤田安彦: "スパッタリング法で作成されたGaSe薄膜の暗電気伝導度測定"応用物理学会学術講演会講演予稿集. 49. 593 (2002)

Yusuke Kobayashi、Daisuke Kadokura、Takamasa Suzuki、Tankosoon、Hiroshi Ito、Masanori Oyama、Yasuhiko Fujita：“溅射法制备的 GaSe 薄膜的暗电导率测量”日本应用物理学会学术会议论文集 49. 593。 (2002)