Preparation of Crystalline Compound Semiconductor in Large Area on the Glass using Low Temperature Growth Technique

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The development of processing semiconductor using homoepitaxial growth has been achieved in technology for the electric devices and other material. In recently, there has been demand to better development of heteroepitaxial growth on the glass of compound semiconductor for photoelectric device. Accordingly a thin film processing technique is necessary for II - VI, III - VI group compound semiconductor of applications to electric material. Considering the research in this method, this study produces semiconductor (ZnS, GaS, GaSe) by the hydrogen ion and electron assist graphoepitaxial growth on the glass. The characteristic of this research is to examine influence of hydrogen ion to thin film growth process in the low temperature crystal growth. The hydrogen ion assist method is available to produce crystal of compound semiconductor on the glass. In this research, it was found that crystalline films are obtained by reactive hydrogen ion at low temperature. The hydrogenous reactive graphoepitaxial growth technique used in this research is useful in deposition of crystalline compound semiconductor.