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Development of Photo-conductive Device with Electric Field Modulation Type using New Material of Layr Semiconductor

利用Layr半导体新材料开发电场调制型光电导器件

基本信息

批准号：
07555114
负责人：
OHYAMA Masanori
金额：
$ 3.58万
依托单位：
Tokyo National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555114/
关键词：
compound semiconductor layr type structure photo conduction material electron beam deposition RF sputtering photo sensor modulated photo device 光センサー

项目摘要

The photoconductor device using new material laminar type compound semiconductor has been researched for fundamental development. The photoconductor device using new material for optical application to dynamic system is expected to be in the development of optelectronics. In this research and project, the new materials suitable for the photoconductor is GaS and GaSe of III-VI compound semiconductor. Fundamental properties of GaS and GaSe thin films prepared by RF spattering have been investigated first. These films have been deposited onto fused silica and glass substrates. It is found that crystalline GaSe films with good crystallinity with the appropriate sputtering conditiion at 500ﾟC of substrate temperature and crystalline GaS films with substrate temperature at 500ﾟC of reactive sputtering a mixture of Ar and H_2 as the sputtering gas. Furthermore, we have investigate of fundamental properties of GaS and GaSe thin films, prepared by electron beam deposition for those films, the crystalline GaSe films good layr type are obtained by electron beam deposition with substrate temperature at 300ﾟC.those the growth processes technigues of semiconductors are will lead to new technology in opt electronics.In specially, we obtain the photoconductivity sigma_p for the GaS thin films of the impurity doping prepared by electron beam Co-deposition (Tb_2Cl_3, Sn 1wt%) with substrate temperature at 300ﾟC.It should be noted here in experiment that the radio photoconductivity sigma_p/dark conductivity sigma_d takes about 10^3 around room temperature, because this value is expected for the possibility of photoconductor preparations in the practical application.

对采用新材料层状化合物半导体的光电导体器件进行了基础性的研究。采用新材料的光电导体器件在动力学系统中的光学应用是光电子学发展的一个重要方向。本课题研究的新材料是Ⅲ-Ⅵ族化合物半导体材料GaS和GaSe。本文首先研究了射频溅射法制备的GaS和GaSe薄膜的基本性质。这些薄膜已被沉积到熔融石英和玻璃基板上。结果表明，采用Ar和H_2的混合溅射气体，在衬底温度为500 ℃时，可以得到结晶性好的GaSe薄膜，在衬底温度为500 ℃时，可以得到结晶性好的GaS薄膜。此外，我们还研究了用电子束淀积法制备的GaS和GaSe薄膜的基本性质，在衬底温度为300 ℃时，用电子束淀积法获得了良好的层状结构的GaSe薄膜。我们得到了电子束共沉积掺杂GaS薄膜的光电导σ_p（Tb_2Cl_3，Sn 1wt%）。在实验中应该注意的是，在300 ℃的衬底温度下，d在室温附近约为10^3，因为该值是光电导体制备在实际应用中的可能性所期望的。