Extremely High-Rate Deposition of High-Quality Amorphous Silicon Carbide Films

高质量非晶碳化硅薄膜的极高速率沉积

• 批准号: 13450058
• 负责人: YOSII Kumayasu
• 金额: $ 3.84万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450058/
• 关键词: Atmospheric pressure plasma CVD; Amorphous SiC; High-rate deposition

Using the atmospheric pressure plasma chemical vapor deposition (CVD) technique, hydrogenated amorphous Si_<1-x>C_x(a-Si_<1-x>C_x : H) films deposited at extremely high rates. The films were prepared on Si(001) wafers at atmospheric pressure in a very high frequency (VHF) plasma of gas mixtures containing He, H_2, SiH_4 and CH_4. First, deposition rate and film properties (structure, density and composition) were studied by transmission electron microscope (TEM), Auger electron spectroscopy (AES) and infrared (IR) absorption spectroscopy as a function of CH_4 concentration. It was found that the maximum deposition rate was 5Onm/s, which was more than 10 times faster than that achieved by the conventional plasma CVD technique, although the deposited films had sparse atomic structures. In order to improve the structure of the a-Si_<1-x>C_x : H films, further investigations were performed. Structure (C-H and Si-H bond densities) and composition of the a-Si_<1-x>C_x:H films were studied as functions of VHF power, CH_4/SiH_4 ratio and the substrate temperature by IR absorption spectroscopy and AES. Surface morphology of the films was observed by scanning electron microscope (SEM). It was implied that particles generated in gas phase deteriorated the film morphology and caused excessive incorporation of hydrogen atoms in the film. Both suppressing particle formation in gas phase and elimination of excessive hydrogen atoms bonded to C and Si atoms at the film-growing surface were important factors to enhance Si-C network formation. As.a result of optimising the deposition parameters, a stoichiometric a-SiC:H film could be deposited at the substrate temperature of 550℃.

采用常压等离子体化学气相沉积（CVD）技术，以极高的速率沉积了氢化非晶Si_<1-x>C_x（a-Si_ C<1-x>_x：H）薄膜。在大气压下，用含有He、H_2、SiH_4和CH_4的混合气体，在甚高频（VHF）等离子体中，在Si（001）基片上制备薄膜。首先，利用透射电子显微镜（TEM）、俄歇电子能谱（AES）和红外吸收光谱（IR）研究了CH_4浓度对沉积速率和薄膜性能（结构、密度和成分）的影响。结果发现，最大沉积速率为50 nm/s，这是超过10倍的速度比通过传统的等离子体CVD技术实现的，虽然沉积的薄膜具有稀疏的原子结构。为了改善a-Si_<1-x>C_x：H薄膜的结构，我们进行了进一步的研究。用<1-x>红外吸收光谱和俄歇电子能谱研究了a-Si_ C_x：H薄膜的结构（C-H键和Si-H键密度）和成分与VHF功率、CH_4/SiH_4比和衬底温度的关系。用扫描电子显微镜（SEM）观察了薄膜的表面形貌。这意味着在气相中产生的颗粒恶化了膜的形貌，并导致过量的氢原子在膜中的结合。抑制气相中颗粒的形成和消除薄膜生长表面与C和Si原子键合的过量氢原子是促进Si-C网络形成的重要因素。通过优化沉积工艺参数，在衬底温度为550℃时，可以沉积出化学计量比的a-SiC：H薄膜。

项目成果

垣内弘章, 大参宏昌, 中澤弘一, 安武 潔, 芳井熊安, 森 勇藏: "大気圧プラズマCVD法によるアモルファスSiCの高速成膜に関する研究(第2報)-成膜パラメータの最適化による膜構造の改善-"精密工学会誌. 70(印刷中). (2004)

Hiroaki Kakiuchi、Hiromasa Osami、Koichi Nakazawa、Kiyoshi Yasutake、Kumayasu Yoshii、Yuzo Mori：《常压等离子体CVD法高速沉积非晶SiC的研究（第2次报告）-通过优化沉积参数的薄膜形成结构改进-》期刊日本精密工程学会 70（印刷中）。

垣内弘章: "大気圧プラズマCVD法の開発"生産と技術. 54. 46-49 (2002)

Hiroaki Kakiuchi：“常压等离子体CVD法的开发”生产与技术54. 46-49 (2002)。

豊田洋通, 井出 敞, 八木秀次, 垣内弘章, 森 勇藏: "大気圧以上の高圧力下でのプラズマCVDによるダイヤモンドの高速形成"精密工学会誌. 69,10. 1444-1448 (2003)

Hiromichi Toyota、Akira Ide、Hidetsugu Yagi、Hiroaki Kakiuchi、Yuzo Mori：“在高于大气压的高压下通过等离子体 CVD 高速形成金刚石”，日本精密工程学会杂志 69,10（2003 年）。 ）

森 勇藏, 垣内弘章, 大参宏昌, 芳井熊安, 安武 潔, 中濱康治: "大気圧プラズマCDV法によるSiN_xの成膜特性"精密工学会誌. 70,2. 292-296 (2004)

Yuzo Mori、Hiroaki Kakiuchi、Hiromasa Osami、Kumayasu Yoshii、Kiyoshi Yasutake、Yasuharu Nakahama：“利用大气压等离子体 CDV 方法的 SiN_x 成膜特性”日本精密工程学会杂志 70,2。

Y.Mori, H.Kakiuchi, K.Yoshii, K.Yasutake, H.Ohmi: "Characterization of hydrogenated amorphous Si_<1-x>C_x films prepared at extremely high rates using very high frequency plasma at atmospheric pressure"J. Phys.D : Applied Physics. 36,23. 3057-3063 (2003)

Y.Mori、H.Kakiuchi、K.Yoshii、K.Yasutake、H.Ohmi：“在大气压下使用甚高频等离子体以极高速率制备的氢化非晶 Si_1-x>C_x 薄膜的表征”J。