High Rep-rate Fast Pulsed Power Modulator Using Static Induction Thyristors

利用具有快速开关能力的高压静电感应晶闸管，研制并测试了一种高重复率脉冲功率调制器，研究了实现磁芯感应同步脉冲响应的基本特性。设计并制作了一种电感储能型栅极驱动器，特别适用于SI晶闸管的关断动作。采用快速功率MOSFET作为开通开关，以保持电压为3kV的SI晶闸管作为关断开关，研制了电感储能脉冲功率调制器。在研究的第一年，在负载电阻加速电压为15V，复位电压为100V，重复率为100pps的情况下，获得了以下实验结果。在第二年，使用50Ω的虚拟负载和2.6μH的空芯电感，在加速电压为250V、脉冲宽度为900 ns的情况下，获得了峰值复位电压1500V、半高宽120 ns的结果。从测量的开关损耗可以预期最大重复率为588 kpps。采用功率MOSFET作为开关元件的脉冲功率调制器，工作速度快，复位电压为1kV，重复率为1 Mpps。利用Finemet的磁芯，对铁芯损耗等脉冲特性进行了评估，并对冷却方法进行了研究。为了提高晶闸管的工作频率，研制了额定电流高达50A的SI晶闸管。

Using high-voltage static induction (SI) thyristors with fast ON-OFF capability, a high rep-rate pulsed power modulator was made and tested to obtain fundamental characteristics for realizing an induction synchrotron Pulse response of magnetic core bas been also investigated.Following results have been obtained through the research of 2 year.1. An inductive-energy-storage type gate driver was designed and made, which is especially suitable for turn-OFF action of SI thyristors.2. Using fast power MOSFETs as turn-ON switches and an SI thyristor with a holding voltage of 3 kV as a turn-OFF switch, an inductive-energy-storage pulsed power modulator was made. In the first year of research, the following experimental results were obtained without a load resistor accelerating voltage of 15 V, reset voltage of l00 V, rep-rate of 100 pps. In the second year, using a dummy load of 50 Ω and an air-core inductor of 2.6 μH, a peak reset voltage of 1500V with FWHM of 120 ns has been obtained for an accelerating voltage of 250 V with a pulse width of 900 ns. From the measured switching loss, maximum rep-rate of 588 kpps could be expected.3. A pulsed power modulator, which is using a power MOSFET as a switching element, has shown fast operation with a reset voltage of 1 kV and a rep-rate of 1 Mpps.4. Using a magnetic core of Finemet, pulse characteristics such as core losses were evaluated and then investigated the method of cooling.5. In order to increase the operating frequency, an SI thyristor with rated current of up to 50 A has been developed.