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High Rep-rate Fast Pulsed Power Modulator Using Static Induction Thyristors

使用静态感应晶闸管的高重复率快速脉冲功率调制器

基本信息

批准号：
13450110
负责人：
HOTTA Eiki
金额：
$ 8.19万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450110/
关键词：
Induction Synchrotron High Repetition Rate Semiconductor Switch Switching Loss Magnetic Core Hysterisis Reset Pulse

项目摘要

Using high-voltage static induction (SI) thyristors with fast ON-OFF capability, a high rep-rate pulsed power modulator was made and tested to obtain fundamental characteristics for realizing an induction synchrotron Pulse response of magnetic core bas been also investigated.Following results have been obtained through the research of 2 year.1. An inductive-energy-storage type gate driver was designed and made, which is especially suitable for turn-OFF action of SI thyristors.2. Using fast power MOSFETs as turn-ON switches and an SI thyristor with a holding voltage of 3 kV as a turn-OFF switch, an inductive-energy-storage pulsed power modulator was made. In the first year of research, the following experimental results were obtained without a load resistor accelerating voltage of 15 V, reset voltage of l00 V, rep-rate of 100 pps. In the second year, using a dummy load of 50 Ω and an air-core inductor of 2.6 μH, a peak reset voltage of 1500V with FWHM of 120 ns has been obtained for an accelerating voltage of 250 V with a pulse width of 900 ns. From the measured switching loss, maximum rep-rate of 588 kpps could be expected.3. A pulsed power modulator, which is using a power MOSFET as a switching element, has shown fast operation with a reset voltage of 1 kV and a rep-rate of 1 Mpps.4. Using a magnetic core of Finemet, pulse characteristics such as core losses were evaluated and then investigated the method of cooling.5. In order to increase the operating frequency, an SI thyristor with rated current of up to 50 A has been developed.

利用具有快速通断能力的高压静电感应（SI）晶闸管，研制了高重复频率脉冲功率调制器，并进行了实验，获得了实现感应同步辐射的基本特性，同时对磁芯的脉冲响应进行了研究，经过两年的研究，取得了以下结果.设计并制作了一种感应储能型门极驱动器，特别适用于开关管的关断动作.采用快速功率MOSFET作为开通开关，3kV保持电压的SI晶闸管作为关断开关，制作了电感储能脉冲功率调制器。在第一年的研究中，在没有负载电阻的情况下，获得了加速电压15V，复位电压100V，重复频率100pps的实验结果。第二年，采用50 Ω的虚负载和2.6 μH的空心电感，在250 V的加速电压和900 ns的脉冲宽度下，获得了1500 V的峰值复位电压和120 ns的半高宽。从测量的开关损耗，最大重复频率为588 kpps.一个脉冲功率调制器，这是使用功率MOSFET作为开关元件，已显示出快速操作与1千伏的复位电压和1 Mps的重复率。4。利用Finemet公司的磁芯，对磁芯损耗等脉冲特性进行了评价，并对冷却方法进行了研究.为了提高工作频率，已研制出额定电流高达50 A的SI晶闸管。