Next Generation Debris-Free EUV Source using Fast Z-pinch Discharge in Cylindrical Gas Curtain

在圆柱形气幕中使用快速 Z 箍缩放电的下一代无碎片 EUV 源

基本信息

  • 批准号:
    17206025
  • 负责人:
  • 金额:
    $ 32.36万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 财政年份:
    2005
  • 资助国家:
    日本
  • 起止时间:
    2005 至 2007
  • 项目状态:
    已结题

项目摘要

To develop a next generation debris-free extreme ultraviolet (EUV) source with high quality and high output power, the objectives of this study were decided as follows: 1. increase energy conversion efficiency from electrical energy storage to EUV emission, 2. suppress the debris generation, 3. develop a debris shield, which does not interfere the discharge gas flow, to mitigate the debris that cannot be removed by the above mentioned method.Since the usual Z-pinch discharge head employs an insulating wall, debris is generated from the wall material. Therefore, in order to prevent the debris from generating, the insulating wall has been removed and the EUV has been intended to be collected in the radial direction. Using a spectrometer, suppression of debris generation was confirmed from the remarkable reduction of impurity lines. In addition, the specially designed cylindrical gas curtain was found to have a discharge gas confinement function, which was not supposed at first.The stray … More inductance of the former device was very large and it was impossible to get large discharge current. Then, the circuit design was re-examined. To reduce the stray inductance in the final stage of discharge circuit as much as possible, an LC inversion generator and a two-stage magnetic pulse compression (MPC) circuit have been adopted. Experimentally obtained current has the amplitude of 22 kA and the pulse width of 260 ns for short-circuit. Moreover, to increase the conversion efficiency from the electrical input to EUV emission, a device which generates a plasma jet by using RF discharge was set.According to the original plan, Z-pinch discharge was tried using the RF preionized plasma jet. As a result, it was found that in case of using RF preionized jet since the chamber was filled with weakly ionized plasma and discharge occurred at other place other than the plasma jet. Therefore, no Z-pinch plasma could be obtained in this case. To keep the inside of chamber high vacuum, using the turbo molecular pump to evacuate the chamber instead of using it for the diffuser, we are now trying to improve the vacuum state in the chamber. Less
为了研制新一代高质量、高输出功率的无碎片极紫外光源,本论文的研究目标如下:1。增加从电能存储到EUV发射的能量转换效率,2.抑制碎片产生,3.开发不干扰放电气流的碎片屏蔽,以减轻不能通过上述方法去除的碎片。由于通常的Z箍缩放电头采用绝缘壁,因此碎片从壁材料产生。因此,为了防止产生碎片,绝缘壁已经被移除,并且EUV已经被意图在径向方向上收集。使用光谱仪,抑制碎片的产生证实了显着减少的杂质线。此外,特别设计的圆柱形气幕被发现具有放电气体限制功能,这在一开始是不应该的。 ...更多信息 前一种装置的电感很大,不可能获得大的放电电流。然后,重新检查电路设计。为了尽可能减小放电回路末级的杂散电感,采用了LC逆变发生器和两级磁脉冲压缩(MPC)回路。实验测得的短路电流幅值为22 kA,脉宽为260 ns。此外,为了提高从电输入到极紫外发射的转换效率,设置了一个利用射频放电产生等离子体射流的装置,并按照原计划,利用射频预电离等离子体射流进行了Z箍缩放电的尝试。结果发现,在使用RF预电离射流的情况下,由于腔室填充有弱电离等离子体,并且放电发生在等离子体射流之外的其它地方。因此,在这种情况下不能获得Z箍缩等离子体。为了保持真空室内部的高真空,我们正在尝试用涡轮分子泵对真空室进行抽真空,而不是用它作为扩散器,以改善真空室的真空状态。少

项目成果

期刊论文数量(121)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
東工大における高品位DPP光源開発
东京工业大学的高质量 DPP 光源开发
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Shoyo Hyodo;Ryogo Kubo;Kouhei Ohnshi;堀田栄喜
  • 通讯作者:
    堀田栄喜
Development of Debris-Free EUV Source using Gas Jet Z-pinch Plasma
使用气体喷射 Z 箍缩等离子体开发无碎片 EUV 源
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Masato;Watanabe
  • 通讯作者:
    Watanabe
Z-ピンチ型放電プラズマEUV光源の研究
Z箍缩放电等离子体EUV光源研究
Development of a Gas Jet-Type Z-Pinch EUV Light Source for Next-Generation Lithography
开发用于下一代光刻的气体喷射型 Z 收缩 EUV 光源
  • DOI:
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    I. Song;R. S. Mohanty;M. Watanabe;T. Kawamura;et. al.
  • 通讯作者:
    et. al.
極端紫外光(EUV)の絶対計測
极紫外光(EUV)的绝对测量
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HOTTA Eiki其他文献

HOTTA Eiki的其他文献

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{{ truncateString('HOTTA Eiki', 18)}}的其他基金

High Rep-rate Fast Pulsed Power Modulator Using Static Induction Thyristors
使用静态感应晶闸管的高重复率快速脉冲功率调制器
  • 批准号:
    13450110
  • 财政年份:
    2001
  • 资助金额:
    $ 32.36万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of High-Rep-Rate Ion Induced Secondary Emission Electron Gun and Its Application
高重复频率离子诱导二次发射电子枪的研制及其应用
  • 批准号:
    10555088
  • 财政年份:
    1998
  • 资助金额:
    $ 32.36万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Fundamental Study of Bidirectional Pulse Generator System for Linear Induction Accelerators
直线感应加速器双向脉冲发生器系统的基础研究
  • 批准号:
    09450109
  • 财政年份:
    1997
  • 资助金额:
    $ 32.36万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Non-interferential Accumulation of Induction Voltage and IREB Generation
感应电压无干扰累积和 IREB 生成
  • 批准号:
    02650197
  • 财政年份:
    1990
  • 资助金额:
    $ 32.36万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

相似海外基金

Fabrication of inorganic resists for pulsed EUV light source
用于脉冲 EUV 光源的无机光刻胶的制造
  • 批准号:
    19K05663
  • 财政年份:
    2019
  • 资助金额:
    $ 32.36万
  • 项目类别:
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Decomposition of Sn debris of EUV light source for next-generation semiconductor lithography
用于下一代半导体光刻的 EUV 光源 Sn 碎片的分解
  • 批准号:
    18K03600
  • 财政年份:
    2018
  • 资助金额:
    $ 32.36万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Diagnostics of debris from laser-produced plasma with tin droplet target for EUV light source
使用 EUV 光源锡滴目标诊断激光产生的等离子体碎片
  • 批准号:
    20760025
  • 财政年份:
    2008
  • 资助金额:
    $ 32.36万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Development of High Performance EUV Light Source Using Condensed Cone-center-axis Plasma Generated by Laser with Nano-second Pulse-power
利用纳秒脉冲功率激光产生的聚光锥中心轴等离子体开发高性能 EUV 光源
  • 批准号:
    17360161
  • 财政年份:
    2005
  • 资助金额:
    $ 32.36万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
SBIR Phase I: Compact, Stable Extreme-Ultraviolet (EUV) Light Source With Lisitano Coil Excitation
SBIR 第一阶段:采用 Lisitano 线圈激励的紧凑、稳定的极紫外 (EUV) 光源
  • 批准号:
    9661120
  • 财政年份:
    1997
  • 资助金额:
    $ 32.36万
  • 项目类别:
    Standard Grant
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