Clarification of anomalous phase-chemistry in ceramic thin films and application for induced properties

陶瓷薄膜中反常相化学的澄清及其诱导性能的应用

• 批准号: 13450266
• 负责人: MIZUTANI Nobuyasu
• 金额: $ 9.86万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450266/
• 关键词: Doping; Thin film; Lattice parameter; Semiconductor; Perovskite; MOD; TEM; PLD; 半導体化; MOCVD; スパッタリング

The purpose of this work is to clarify anomalous phenomena in phase-chemistry for ceramics thin films. In this work, the rage of "anomalies" are wide range of solid-solution, superlattice, multi-layered thin films. Especially, the phenomena of "doping" were extensively studied, and relationship between crystal structure and properties were considered for ceramic thin films prepared by several methods such as pulsed-laser deposition (PLD), metal-organic chemical vapor deposition (MOCVD), chemical-solution deposition and etc.It was clarified that wide range of solubiity limit (Sr/Ti ratio) was observed as well as that observed for MOCVD-prepared SrTiO_3 films because continuous change of lattice parameter was observed with composition. It is very difficult to prepare Nb-doped yttria-stabilized zirconia (YSZ) in the bulk form, however, we found wide solubility (up to at least 20 mol%) of Nb into YSZ for PLD-prepared films. The addition of Nb improved electrical properties of YSZ, especially from the point of capacitance-voltage (C-V) characteristics.

本工作的目的是澄清陶瓷薄膜相化学中的反常现象。在这项工作中，“反常”的范围很广，固溶体，超晶格，多层薄膜。特别是对脉冲激光沉积(PLD)、金属-有机化学气相沉积(MOCVD)、化学溶液沉积等方法制备的陶瓷薄膜的“掺杂”现象进行了深入的研究，探讨了陶瓷薄膜的晶体结构与性能之间的关系。结果表明，由于晶格参数随成分的不断变化，陶瓷薄膜的固溶度极限范围很宽(锶/钛比)，与MOCVD法制备的陶瓷薄膜一样。在体相中制备Nb掺杂的Y3+稳定的氧化锆(YSZ)是非常困难的，然而，我们发现对于PLD制备的薄膜来说，Nb在YSZ中的溶解度很广(至少达到20mol%)。Nb的加入改善了YSZ的电学性能，特别是从电容-电压(C-V)特性的角度。

项目成果

Y. Xuan, Y. Ishida, N. Wakiya, K. Shinozaki, N. Mizutani: "Growth Mechanism of PbTiO_3 Thin Films Deposited on LaAlaO_3(100) by Metallorganic Chemical Vapor Deposition"Ceramic Processing Science. 4. 249-254 (2001)

Y. Xu，Y. Ishida，N. Wakiya，K. Shinozaki，N. Mizutani：“金属有机化学气相沉积在LaAlaO_3(100)上沉积PbTiO_3薄膜的生长机制”陶瓷加工科学。

Improvement of capacitance-voltage (C-V) characteristics of YSZ/Si(001) and ZrO_2/Si thin film by Nb-doping

Nb掺杂改善YSZ/Si(001)和ZrO_2/Si薄膜的电容-电压(C-V)特性

• 发表时间: 2003
• 期刊: Mat. Res. Soc. Symp. Proc. 747
• 作者: N.Wakiya;T.Moriya;K.Shinozaki;N.Mizutani
• 通讯作者: N.Mizutani

Role of the First Atomic Layers in Epitaxial Relationship and Interface Characteristics of SrTiO_3 Films on CeO2/YSZ/Si(001)

第一原子层对CeO2/YSZ/Si(001)上SrTiO_3薄膜外延关系及界面特性的影响

• 发表时间: 2003
• 期刊: Mat. Res. Soc. Symp. Proc. 747
• 作者: T.Yamada;T.Kiguchi;N.Wakiya;K.Shinozaki;N.Mizutani
• 通讯作者: N.Mizutani

T.Yamada, T.Kiguchi, N.Wakiya, K.Shinozaki, N.Mizutani: "Role of the First Atomic Layers in Epitaxial Relationship and Interface Characteristics of SrTiO_3 Films on CeO_2/YSZ/Si(001)"Mat.Res.Soc.Symp.Proc.. 747. 243-254 (2003)

T.Yamada、T.Kiguchi、N.Wakiya、K.Shinozaki、N.Mizutani：“第一原子层在 CeO_2/YSZ/Si(001) 上 SrTiO_3 薄膜的外延关系和界面特性中的作用”Mat.Res。

N.Wakiya, T.Moriya, K.Shinozaki, N.Mizutani: "Improvement of capacitance-voltage (C-V) characteristics of YSZ/Si(001) and ZrO_2/Si thin film by Nb-doping"Mat.Res.Soc.Symp.Proc.. 747. 153-158 (2003)

N.Wakiya、T.Moriya、K.Shinozaki、N.Mizutani：“通过 Nb 掺杂改善 YSZ/Si(001) 和 ZrO_2/Si 薄膜的电容电压 (C-V) 特性”Mat.Res.Soc。