Mechanisim of Properties generation and Formation of Ceramic Thin Film with Varistor and PTCR Properties

具有压敏电阻和PTCR性能的陶瓷薄膜的性能产生和形成机理

• 批准号: 10355025
• 负责人: MIZUTANI Nobuyasu
• 金额: $ 14.08万
• 依托单位: Tokyo Institution of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A).
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10355025/
• 关键词: thin film; varistor; PTC; microstructure; MOCVD; growth mechanisim; SrTiO_3; BaTiO_3; バリスタ特性; Nb,Biドープ; チタン酸バリウム; 半導性; スパッタリング

The varistor and PTC ceramics is very importan electronic parts for electronic products. These ceramics have been used as the sintered materials. The origin for property generation is due to the interface of each grain boundary in the sintered body. However, the sintered elecrtronic parts have some limitation for decreasing these size.The purpose of this study is to realize the thin film varistor and PTC parts using the some thin film formation method, mainly MOVCD and CSD (chemical solution deposition). The main materials for study are SrTiO_3, BaTiO_3 and these solid solution, and PbTiO_3, PZT having perovskite structure.Through above studies, the following useful results were obtained. And we succeeded in preparation of varistor and PTC thin film.(1) preparation of semiconductive, epitaxial thin film of Nb and La doped BaTiO_3 and SrTiO_3(2) mechanism of doping process and the situation of dopant atom in the perovskite structure thin film(3) preparation of Bi doped semiconductive SrTiO_3 thin film by MOCVD(4) The origin of varistor property in Bi doped SrTiO_3 film in due to the interface of domains with different orientation(5) Preparation of Bi doped semiconductive BaTiO_3 using chemical solution process suchi as MOD and CSD(6) Varistor phenomena was appeared on I-V characteristics for thin film CSD process and the mechanism was discussed(7) PTC phenomena was appeared around 125℃ for Bi doped BaTiO_3 thin film using CSD process

压敏电阻和PTC陶瓷是电子产品中非常重要的电子元器件。这些陶瓷已被用作烧结材料。性能产生的起源是由于烧结体中每个晶界的界面。然而，烧结电子元件在减小这些尺寸方面有一定的局限性，本研究的目的是利用一些薄膜形成方法，主要是MOVCD和CSD（化学溶液沉积）来实现薄膜压敏电阻和PTC元件。主要研究了SrTiO_3、BaTiO_3及其固溶体和具有钙钛矿结构的PbTiO_3、PZT等材料。并成功地制备了压敏电阻和PTC薄膜。(1)制备聚乙烯醇，Nb和La掺杂BaTiO_3和SrTiO_3外延薄膜的研究（2）掺杂过程机理及掺杂原子在钙钛矿结构薄膜中的位置（3）Bi掺杂BaTiO_3和SrTiO_3薄膜的MOCVD制备（4）Bi掺杂SrTiO_3薄膜压敏特性的起源是不同取向畴的界面（5）采用化学溶液法（MOD法和CSD法）制备Bi掺杂BaTiO_3薄膜。（6）CSD法制备的Bi掺杂BaTiO_3薄膜在I-V特性曲线上出现了压敏电阻现象，并对其机理进行了探讨。（7）CSD法制备的Bi掺杂BaTiO_3薄膜在125℃附近出现了PTC现象

项目成果

Sung-Yong Chun: "Electrically active grain boundaries in ZnO varistors by liquid-infiltration method"J.of Materials Science : Materials in Electronics II. 11. 73-80 (2000)

Sung-Yong Chun：“通过液体渗透法研究 ZnO 压敏电阻中的电活性晶界”J.of Materials Science : Materials in Electronics II。

N.Mizutani, D.Nagano, H.Funakubu, N.Wakiya and K.Shinozaki: "MOCVD Preparation and Properties of BaTiO_3-SrTiO_3 Solid Solution Thin Film"Journal of the Korean Physical Society. 32[2]. S1336-S1339 (1998)

N.Mizutani、D.Nagano、H.Funakubu、N.Wakiya 和 K.Shinozaki：“BaTiO_3-SrTiO_3 固溶体薄膜的 MOCVD 制备和性能”韩国物理学会杂志。

Daisuke Nagano: "Electrical Properties of Semiconductive Nb-doped BaTiO_3 Thin Films Prepared by Metal-organic Chemical-vapor Deposition"Applied Physics Letters.. 72. 2017-2019 (1998)

长野大辅：《金属有机化学气相沉积制备的半导体铌掺杂BaTiO_3薄膜的电性能》应用物理快报.. 72. 2017-2019 (1998)

Sung-Yong Chun, Naoki Wakiya, Kazuo Shinozaki and Nobuyasu Mizutani: "Investigation of the solution boundaries and microstrucure in the ZnO-PrO_<1.5>-CoO System"J.Mater. Res.. 13[8]. 2110-2116 (1998)

Sung-Yong Chun、Naoki Wakiya、Kazuo Shinozaki 和 Nobuyasu Mizutani：“ZnO-PrO_<1.5>-CoO 体系中溶液边界和微观结构的研究”J.Mater。

Hiroshi Funakubo, Yutaka Takeshima, Daisuke Nagano, Kazuo Shinozaki and Nobuyasu Mizutani: "Crystal Structure and dielectric property of epitaxially grown(Ba, Sr)TiO_3 thin film prepared by molecular chemical vapor deposition"J.Mater. Res.. 13[12]. 3512-3

Hiroshi Funakubo、Yutaka Takeshima、Daisuke Nagano、Kazuo Shinozaki 和Nobuyasu Mizutani：“分子化学气相沉积外延生长(Ba,Sr)TiO_3 薄膜的晶体结构和介电性能”J.Mater。