visualization of Fermi level pinning sites at metal semiconductor interfaces

金属半导体界面费米能级钉扎位点的可视化

• 批准号: 13555088
• 负责人: HASEGAWA Yukio
• 金额: $ 8.58万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555088/
• 关键词: metal semiconductor interface; scanning tunneling microscopy; silicon surfaces; interface states; atomic force microscopy; フェルミ準位ピニング; バリスティック電子放射顕微鏡

We have installed a function of ballistic electron emission microscopy (BEEM) on our ultrahigh vacuum scanning tunneling microscopy and are now checking its performance. We set up a unit composed of electrodes, electrical feedthough, and a transfer rod which are necessary for BEEM, attached it to the ultrahigh vacuum chamber, and checked they work properly. We also developed electronics for controlling the signal and adjusted computer-aided measurement system appropriately for taking the BEEM imaging and measuring I-V spectra.Since for this project it is very important to prepare metal semiconductor interfaces with a low density of interface states, we set up a glove box for the chemical processing of the samples in which concentration/density of oxygen, water and particle is extremely small. We developed a method to make samples with the ideal interface on silicon samples but for silicon carbide, which we planned to use for this study, we could not find an appropriate condition of the chemical processing for the pinning-less interface samples. We still need to work for that.We also developed a method of improving spatial resolution of atomic force microscopy (AFM) for the pinning site observation. With an intention of improving force sensitivity of AFM, we worked for reducing electrical noise and controlling the shape of the probe tip, successfully detected a single covalent chemical bonding, and took highly resolved images of silicon surfaces. We also tried for a measurement of surface potential profile imaging and confirmed that the potential imaging is taken with high sensitivity and high spatial resolutions.We also investigated the ground state structure of silicon surface, which is used to make metal semiconductor interfaces as a substrate. Using low temperature scanning tunneling microscopy (STM) with an accurate temperature measurement at the sample site, we successfully determined the structure.

我们已经在超高真空扫描隧道显微镜上安装了弹道电子发射显微镜（BEEM）的功能，现在正在检查其性能。我们设置了一个由电极组成的单元，电气进料，并将其连接到超高真空室，并检查它们正常工作。我们还开发了用于控制信号和调整的计算机辅助测量系统的电子设备，以适当地将Beem成像和测量I-V频谱进行。在此项目中，准备金属半导体界面具有低密度界面状态的金属半导体界面，我们为浓度/浓度的complate/contraction contection/contection intacky of satem intacky and consemation/complocy intacky intacky of interfactor satement and cositation/conteration in coption/conteration intacky of contection/conteral of contection/contery coption/contery的化学处理。我们开发了一种在硅样品上使用理想界面制作样品的方法，但是对于碳化硅，我们计划将其用于本研究，我们找不到适当的无固定界面样品的化学处理条件。我们仍然需要为此而努力。我们还开发了一种改善原子力显微镜（AFM）空间分辨率的方法，以固定位点观察。为了提高AFM的力敏感性，我们致力于减少电噪声并控制探针尖端的形状，成功地检测到单个共价化学键合，并拍摄了硅表面的高度解决图像。我们还尝试了测量表面电位图像成像的测量，并确认潜在的成像是以高灵敏度和高空间分辨率进行的。我们还研究了硅表面的基态结构，该结构用于使金属半导体接口作为底物。使用低温扫描隧道显微镜（STM）在样品位点进行精确的温度测量，我们成功确定了结构。

项目成果

Masanori Ono, A. Kamoshida, N. Matsuura, E. Ishikawa, T. Eguchi, and Y. Hasegawa: "Dimer buckling of the Si(00l)2x1 surface below 10K observed by low-temperature scanning tunneling microscope"Physical Review B, Rapid Communication. accepted. (2003)

Masanori Ono、A. Kamoshida、N. Matsuura、E. Ishikawa、T. Eguchi 和 Y. Hasekawa：“通过低温扫描隧道显微镜观察到 10K 以下 Si(00l)2x1 表面的二聚体屈曲”物理评论 B，

M.Ono, A.Kamoshida, N.Matsuura, E.Ishikawa, T.Eguchi, Y.Hasegawa: "Dimer buckling of the Si(001)2x1 surface below 10K observed by low-temperature scanning tunneling microscope"Physical Review B, Rapid Communication. (発表予定).

M.Ono、A.Kamoshida、N.Matsuura、E.Ishikawa、T.Eguchi、Y.Hasekawa：“通过低温扫描隧道显微镜观察到 10K 以下 Si(001)2x1 表面的二聚体屈曲”物理评论 B，快速沟通（待公布）。

M.Ono, A.Kamoshida, N.matsuura, T.Eguchi, Y.Hasegawa: "Arrangement of the dimer structure on the Si(001)2x1 surface observed by low-temperature scanning tunneling microscope"Physica E. (発表予定).

M.Ono、A.Kamoshida、N.matsuura、T.Eguchi、Y.Hasekawa：“低温扫描隧道显微镜观察到的 Si(001)2x1 表面上二聚体结构的排列”Physica E.（待提交） ）。

Y, Hasegawa, and T. Eguchi: "Potential profile around step edges of Si surfaces measured by nc-AFM"Applied Surface Science. 188. 386-390 (2002)

Y、Hasekawa 和 T. Eguchi：“通过 nc-AFM 测量的 Si 表面阶梯边缘周围的电势分布”应用表面科学。

Y.Hasegawa, T.Eguchi: "Potential Profile around step edges of Sisurfaces measured by nc-AFM"Applied Surface Science. (発表予定).

Y.Hasekawa、T.Eguchi：“通过 nc-AFM 测量的 Si 表面台阶边缘周围的电势分布”应用表面科学（待提交）。