PREPARATION OF THIN FILM LIGHT WAVEGUIDE CIRCUIT OF FLUORIDE GLASS BY PLASMA CVD AND ATMOSPHERIC PLASMA

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1. An electron cyclotron plasma-enhanced chemical vapor deposition apparatus, which is suitable for producing planar fluoride glass films, was developed.2. ZnF_2-BaF_2 thin films were prepared on CaF2(111) substrates by an ECR plasma-enhanced CVD technique. As starting materials on Zn and Ba, β-diketonates of Zn(thd)_2 and Ba(hfa)_2(tg) were used, respectively. On the other hand, Ar and NF_3 gases were used as a carrier gas and a fluorinating gas, respectively. ZnF_2-BaF_2 thin films were deposited on substrates of single crystal CaF_2(111) plates under various deposition conditions (plasma power, deposition rate, substrate temperature, etc.) Amorphous thin films were obtained in compositions of ZnF_2 alone and 60ZnF_2・40BaF_2. The synthesis of an amorphous ZnF_2 film is the first time.3. For the AlF_3-BaF_2 system the preparation of amorphous thin films were attempted using b-diketonates of Al(aa)_3 and Ba(tfa)_2(tg) as starting materials under various CVD conditions. As a result, amorphous thin films were obtained in compositions of AlF_3 alone, 80AlF_3・20BaF_2 and 60AlF_3・4BaF_2. The synthesis of an amorphous AlF_3 film also is the first time.4. For the GaF_3-BaF_2 system the preparation of amorphous thin films were attempted using b-diketonates of Ga(aa)_3 and Ba(tfa)_2(tg) as starting materials under various CVD conditions. As a result, amorphous thin films were obtained in compositions of GaF_3 alone and 50GaF_3・50BaF_2. The synthesis of an amorpous GaF_3 film also is the first time.5. The amorphous thin films synthesized in the ZnF_2-BaF_2, AlF_3-BaF_2 and GaF_3-BaF_2 systems were characterized by means of thin-film X-ray diffraction, IR absorption, atomic force microscope, thickness and refractive index.6. It was proved that the developed ECR plasma-enhanced CVD technique is applicable in preparing amorphous thin films of fluoride systems.