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PREPARATION OF THIN FILM LIGHT WAVEGUIDE CIRCUIT OF FLUORIDE GLASS BY PLASMA CVD AND ATMOSPHERIC PLASMA

等离子体CVD和常压等离子体制备氟化玻璃薄膜光波导电路

基本信息

批准号：
13555174
负责人：
KAWAMOTO Yoji
金额：
$ 8.13万
依托单位：
KOBE UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555174/
关键词：
GLASS THIN FILM PLASMA CVD ATMOSPHERIC PLASMA LIGHT WAVEGUIDE CIRCUIT 大気圧プラズ

项目摘要

1. An electron cyclotron plasma-enhanced chemical vapor deposition apparatus, which is suitable for producing planar fluoride glass films, was developed.2. ZnF_2-BaF_2 thin films were prepared on CaF2(111) substrates by an ECR plasma-enhanced CVD technique. As starting materials on Zn and Ba, β-diketonates of Zn(thd)_2 and Ba(hfa)_2(tg) were used, respectively. On the other hand, Ar and NF_3 gases were used as a carrier gas and a fluorinating gas, respectively. ZnF_2-BaF_2 thin films were deposited on substrates of single crystal CaF_2(111) plates under various deposition conditions (plasma power, deposition rate, substrate temperature, etc.) Amorphous thin films were obtained in compositions of ZnF_2 alone and 60ZnF_2・40BaF_2. The synthesis of an amorphous ZnF_2 film is the first time.3. For the AlF_3-BaF_2 system the preparation of amorphous thin films were attempted using b-diketonates of Al(aa)_3 and Ba(tfa)_2(tg) as starting materials under various CVD conditions. As a result, amorphous thin films were obtained in compositions of AlF_3 alone, 80AlF_3・20BaF_2 and 60AlF_3・4BaF_2. The synthesis of an amorphous AlF_3 film also is the first time.4. For the GaF_3-BaF_2 system the preparation of amorphous thin films were attempted using b-diketonates of Ga(aa)_3 and Ba(tfa)_2(tg) as starting materials under various CVD conditions. As a result, amorphous thin films were obtained in compositions of GaF_3 alone and 50GaF_3・50BaF_2. The synthesis of an amorpous GaF_3 film also is the first time.5. The amorphous thin films synthesized in the ZnF_2-BaF_2, AlF_3-BaF_2 and GaF_3-BaF_2 systems were characterized by means of thin-film X-ray diffraction, IR absorption, atomic force microscope, thickness and refractive index.6. It was proved that the developed ECR plasma-enhanced CVD technique is applicable in preparing amorphous thin films of fluoride systems.

1.研制了适合平面氟化玻璃薄膜制备的电子回旋等离子体增强化学气相沉积装置。 2．采用ECR等离子体增强CVD技术在CaF2(111)衬底上制备了ZnF_2-BaF_2薄膜。作为Zn和Ba的起始原料，分别使用Zn(thd)_2和Ba(hfa)_2(tg)的β-二酮盐。另一方面，Ar和NF_3气体分别用作载气和氟化气体。在不同的沉积条件（等离子体功率、沉积速率、基底温度等）下，在单晶CaF_2(111)板基底上沉积ZnF_2-BaF_2薄膜，获得了单独ZnF_2和60ZnF_2·40BaF_2组成的非晶薄膜。首次合成非晶ZnF_2薄膜。 3．对于AlF_3-BaF_2体系，尝试使用Al(aa)_3和Ba(tfa)_2(tg)的b-二酮盐作为起始材料在各种CVD条件下制备非晶薄膜。结果，获得了单独的AlF_3、80AlF_3·20BaF_2和60AlF_3·4BaF_2的组成的非晶薄膜。非晶AlF_3薄膜的合成也是首次。 4．对于GaF_3-BaF_2体系，尝试使用Ga(aa)_3和Ba(tfa)_2(tg)的b-二酮酸盐作为起始材料在各种CVD条件下制备非晶薄膜。结果，获得了单独的GaF_3和50GaF_3·50BaF_2的组成的非晶薄膜。非晶GaF_3薄膜的合成也是首次。 5．采用薄膜X射线衍射、红外吸收、原子力显微镜、厚度和折射率等手段对ZnF_2-BaF_2、AlF_3-BaF_2和GaF_3-BaF_2体系合成的非晶薄膜进行了表征。 6．证明所开发的ECR等离子体增强CVD技术适用于制备氟化物系非晶薄膜。