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Development of amorphous fluoride thin-films with optical and electrical functions by ECR plasuma CVD of metal complexes

利用金属配合物的ECR等离子体CVD开发具有光学和电学功能的非晶氟化物薄膜

基本信息

批准号：
09555191
负责人：
KAWAMOTO Yoji
金额：
$ 5.5万
依托单位：
Kobe University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555191/
关键词：
ECR plasma CVD Metal complex Fluoride Amorphous thin film Optical function 電気機能

项目摘要

1.An electron cyclotron plasma-enhanced chemical vapor deposition apparatus, which is suitable for producing planar fluoride glass films, was developed.2.ZnFィイD22ィエD2-BaFィイD22ィエD2 thin films were prepared on CaF2(111) substrates by an ECR plasma-enhanced CVD technique. As starting materials of Zn and Ba, β-diketonates of Zn(thd)ィイD22ィエD2 and Ba(hfa)ィイD22ィエD2(tg) were used, respectively. On the other hand, Ar and NFィイD23ィエD2 gases were used as a carrier gas and a fluorinating gas, respectively. ZnFィイD22ィエD2-BaFィイD22ィエD2 thin films were deposited on substrates of single crystal CaFィイD22ィエD2(111) plates under various deposition conditions (plasma power, deposition rate, substrate temperature, etc.) Amorphous thin films were obtained in compositions of ZnFィイD22ィエD2 alone and 60ZnFィイD22ィエD2・40BaFィイD22ィエD2. The synthesis of an amorphous ZnFィイD22ィエD2 film is the first time.3.For the AlFィイD23ィエD2-BaFィイD22ィエD2 system the preparation of amorphous thins films were attempted using b-diketonates of … More Al(aa)ィイD23ィエD2 and Ba(tfa)ィイD22ィエD2(tg) as starting materials under various CVD conditions. As a result, amorphous thin films were obtained in compositions of AlFィイD23ィエD2 alone, 80AlFィイD23ィエD2・20BaFィイD22ィエD2 and 60AlFィイD23ィエD2・4BaFィイD22ィエD2. The synthesis of an amorphous AlFィイD23ィエD2 film also is the first time.4.For the GaFィイD23ィエD2-BaFィイD22ィエD2 system the preparation of amorphous thin films were attempted using b-diketonates of Ga(aa)ィイD23ィエD2 and Ba(tfa)ィイD22ィエD2(tg) as starting materials under various CVD conditions. As a result, amorphous thin films were obtained in compositions of GaFィイD23ィエD2 alone and 50GaFィイD23ィエD2・50BaFィイD22ィエD2. The synthesis of an amorphous GaFィイD23ィエD2 film also is the first time.5.The amorphous thin films synthesizedin the ZnFィイD22ィエD2-BaFィイD22ィエD2, AlFィイD23ィエD2-BaFィイD22ィエD2 and GaFィイD23ィエD2-BaFィイD22ィエD2 systems were characterized by means of thin-film X-ray diffraction, IR absorption, atomic force microscope, thickness and refractive index.6.It was proved that the developed ECR plasma-enhanced CVD technique is applicable in preparing amorphous thin films of fluoride systems. Less

1.研制了一种适合于制备平面氟化物玻璃薄膜的电子回旋等离子体增强化学气相沉积装置。2.采用ECR等离子体增强化学气相沉积技术在CaF_2（111）衬底上制备了ZnF_xD_22_xD_2-BaF_xD_22_xD_2薄膜。作为Zn和Ba的起始原料，分别使用Zn（thd）β-二酮D22 β-二酮D2和Ba（hfa）β-二酮D22 β-二酮D2（tg）。另一方面，分别使用Ar和NF-κ B D23-D2气体作为载气和氟化气体。在不同的沉积条件（等离子体功率、沉积速率、衬底温度等）下，在单晶CaF_xF_xD_（22）O_（22在单独的ZnF掺杂D22纳米D2和60 ZnF掺杂D22纳米D2·40 BaF掺杂D22纳米D2的组成中获得了非晶薄膜。首次合成了非晶态ZnF_2D_2D_2薄膜。3.对于AlF_2D_2D_2D_2-BaF_2D_2D_2体系，尝试了用β-二酮化合物制备非晶态薄膜。 ...更多信息在各种CVD条件下，以Al（aa）β-D23 β-D2和Ba（tfa）β-D22 β-D2（tg）作为起始材料。结果，在单独的AlF掺杂D23掺杂D2、80 AlF掺杂D23掺杂D2·20 BaF掺杂D22掺杂D2和60 AlF掺杂D23掺杂D2·4 BaF掺杂D22掺杂D2的组成中获得非晶薄膜。4.在GaF_xD_（23）xD_（22）xD_（23）xD_（22）xD_（23结果，在单独的GaF掺杂D23掺杂D2和50 GaF掺杂D23掺杂D2·50 BaF掺杂D22掺杂D2的组成中获得非晶薄膜。采用薄膜X射线衍射、红外吸收光谱、原子力显微镜、透射电镜等手段对ZnF掺杂D22薄膜、AlF掺杂D23薄膜、GaF掺杂D23薄膜、BaF掺杂D22薄膜、BaF掺杂D23薄膜、BaF掺杂D22薄膜中的非晶薄膜进行了表征，6.证明了ECR等离子体增强CVD技术在制备氟化物系非晶薄膜中的适用性。少