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Development of Electrically Detected Magnetic Resonance for Detecting Paramagnetic Substances at Very Low Concentration

用于检测极低浓度顺磁性物质的电检测磁共振的发展

基本信息

批准号：
15350051
负责人：
SATO Toshiyuki
金额：
$ 7.36万
依托单位：
Yamagata Promotion Organization for Industrial Technology (2004)Yamagata Public Corporation For the Development Of Industry, Institute Life Support Technology (2003)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15350051/
关键词：
EDMR ESR AC bias semiconductor paramagnetic species AC bias semiconductor paramagnetic species

项目摘要

In this study, we developed a method detecting paramagnetic substances at very low concentration in a semiconductor utilizing electrically detected magnetic resonance (EDMR). The AC bias detection technique, which we newly developed, enabled to cancel the effects, such as Shottky barriers, that disturbed the ohmic contact between the electrodes and a sample material. Further, we certified that the AC bias current penetrated the thin surface layer of a sample such as silicon oxide, which normally obstructed a DC current. Using the AC bias, non-destructive EDMR measurements of part of a silicon wafer were realized. The EDMR spectrum obtained was the same as that when using a conventional method (i.e., DC bias). SNR was worse when AC bias was used ; however, because the noise appeared to be coming from outside, ample room exists to improve the sensitivity of the AC bias technique. This AC bias technique can be applied to measure various bulk materials ; in addition, it should be applicable to systems in which oxidization or reduction caused by a DC bias current corrupts the system.We also proposed an open type RF resonator for ESR irradiation, and a procedure to obtain the signal intensity at the selected region, which were effective to observe EDMR.Further, some advanced experimental results were obtained in this research. The EDMR images of a silicon plate were obtained under partial light illumination. We showed that EDMR imaging by localized illumination can be a tool by which the characteristics of semiconductors can be estimated. We also firstly observed EDMR spectra of compound semiconductor, which had very high band-gap energy by using UV light emitting diode illumination.By these results, we made possible to observe EDMR of not only silicon semiconductor devices but also bulk various materials, such as a compound semiconductor non-destructively.

在这项研究中，我们开发了一种方法检测顺磁性物质在很低的浓度在半导体利用电检测磁共振（EDMR）。我们新开发的AC偏压检测技术能够消除影响，如Shocks势垒，干扰电极和样品材料之间的欧姆接触。此外，我们证明，交流偏置电流穿透薄表面层的样品，如氧化硅，这通常阻碍了直流电流。利用交流偏置，实现了对部分硅片的非破坏性EDMR测量。所获得的EDMR谱与使用常规方法（即，DC偏压）。当使用AC偏置时，SNR更差;然而，因为噪声似乎来自外部，所以存在足够的空间来提高AC偏置技术的灵敏度。这种交流偏置技术可以应用于各种块状材料的测量;此外，它应该适用于由直流偏置电流引起的氧化或还原破坏系统的系统。我们还提出了一种用于ESR辐照的开放式RF谐振器，以及在选定区域获得信号强度的方法，这些方法对观察EDMR是有效的。此外，本研究取得了一些先进的实验结果。在部分光照条件下，获得了硅板的EDMR图像。我们表明，EDMR成像通过局部照明可以是一种工具，通过它可以估计半导体的特性。我们还首次利用紫外发光二极管（UV LED）光源观察到了具有很高带隙能量的化合物半导体的EDMR谱，从而不仅可以对硅半导体器件，而且可以对化合物半导体等体材料进行非破坏性的EDMR观察。